References
- H. Lin, POWER SiC 2017: MATERIALS, DEVICES, MODULES, AND APPLICATIONS, https://www.systemplus.fr/wp-content/uploads/2018/07/YD18027_Power_SiC_2018_Materials_Devices_Applications_July2018_Yole_Flyer.pdf (2018).
- T. Akiyama, A. Ito, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi, Surf Sci., 641, 174 (2015). https://doi.org/10.1016/j.susc.2015.06.028
- S. A. Correa, C. Radtke, G. V. Soares, L. Miotti, I. J. R. Baumvol, S. Dimitrijev, J. Han, L. Hold, F. Kong, and F. C. Stedile, Appl. Phys. Lett., 94, 251909 (2009). https://doi.org/10.1063/1.3159812
- C. H. Kim, J. H. Moon, J. H. Yim, D. H. Lee, J. H. Lee, H. H. Lee, and H. J. Kim, Appl. Phys. Lett., 100, 082112 (2012). https://doi.org/10.1063/1.3689766
- D. H. Lee, C. H. Kim, H. H. Lee, S. H. Lee, H. J. Kang, H. w. Kim, H. K. Park, J. Y. Heo, and H. J. Kim, IEEE ELECTRON DEVICE LETTERS, 35, 868 (2014). https://doi.org/10.1109/LED.2014.2331316
- H. J. Kang, Ph. D. Impurity-related Interface States of 4H-SiC Schottky Diode Observed by Deep Level Transient Spectroscopy, Seoul National University, Seoul (2018).
- A. Cowley and S. Sze, J. Appl. Phys., 36, 3212 (1965). https://doi.org/10.1063/1.1702952
- C. Crowell and S. Alipanahi, Solid-State Electron., 24, 25 (1981). https://doi.org/10.1016/0038-1101(81)90209-4
- K. Kawahara, J. Suda, and T. Kimoto, J. Appl. Phys., 111, 053710 (2012). https://doi.org/10.1063/1.3692766
- C. H. Kim, S. H. Lee, J. H. Moon, J. R. Kim, H. H. Lee, H. J. Kang, H. W. Kim, J. Y. Heo, and H. J. Kim, ECS Solid State Lett., 4, N9 (2015). https://doi.org/10.1149/2.0021509ssl
- H. W. Kim, H. H. Lee, Y. S. Kim, S. H. Lee, H. J. Kang, and J. Y. Heo, Cryst. Eng. Comm., 19, 2359 (2017). https://doi.org/10.1039/C7CE00479F