한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제31권6호
  • /
  • Pages.362-366
  • /
  • 2018
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

온도에 따른 4H-SiC에 기반한 SBD, PiN 특성 비교

Temperature-Dependent Characteristics of SBD and PiN Diodes in 4H-SiC

  • 서지호 (광운대학교 전자재료공학과) ;
  • 조슬기 (광운대학교 전자재료공학과) ;
  • 이영재 (광운대학교 전자재료공학과) ;
  • 안재인 (광운대학교 전자재료공학과) ;
  • 민성지 (광운대학교 전자재료공학과) ;
  • 이대석 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과) ;
  • 오종민 (광운대학교 전자재료공학과)
  • Seo, Ji-Ho (Department of Electric Materials Engineering, Kwang-woon University) ;
  • Cho, Seulki (Department of Electric Materials Engineering, Kwang-woon University) ;
  • Lee, Young-Jae (Department of Electric Materials Engineering, Kwang-woon University) ;
  • An, Jae-In (Department of Electric Materials Engineering, Kwang-woon University) ;
  • Min, Seong-Ji (Department of Electric Materials Engineering, Kwang-woon University) ;
  • Lee, Daeseok (Department of Electric Materials Engineering, Kwang-woon University) ;
  • Koo, Sang-Mo (Department of Electric Materials Engineering, Kwang-woon University) ;
  • Oh, Jong-Min (Department of Electric Materials Engineering, Kwang-woon University)
  • 투고 : 2018.05.09
  • 심사 : 2018.06.15
  • 발행 : 2018.09.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Silicon carbide is widely used in power semiconductor devices owing to its high energy gap. In particular, Schottky barrier diode (SBD) and PiN diodes fabricated on 4H-SiC wafers are being applied to various fields such as power devices. The characteristics of SBD and PiN diodes can be extracted from C-V and I-V characteristics. The measured Schottky barrier height (SBH) was 1.23 eV in the temperature range of 298~473 K, and the average ideal factor is 1.17. The results show that the device with the Schottky contact is characterized by the theory of thermal emission. As the temperature increases, the parameters are changed and the Vth is shifted to lower voltages.

키워드

참고문헌

  1. T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology (John Wiley & Sons, Singapore, 2014) p. 1-6.
  2. B. J. Baliga, Silicon Carbide Power Devices (World Scientific Publishing Co., Pvt. Ltd. Singapore, 2005) p. 16.
  3. K. M Geib, C. Wilson, R. G. Long, and C. W. Wilmsen, J. Appl. Phys., 68, 2796 (1990). [DOI: https://doi.org/10.1063/1.346457]
  4. R. J. Trew, Phys. Status Solidi A, 162, 409 (1997). [DOI: https://doi.org/10.1002/1521-396X(199707)162:1%3C409::AIDPSSA409%3E3.0.CO;2-O]
  5. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981) p. 375.
  6. J. Millan, P. Godignon, and D. Tournier, Proc. 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) (IEEE, Nis, Serbia, 2004) p. 23.
  7. H. Lendenmann, F. Dahlquist, N. Johansson, R. Soderholm, P. A. Nilsson, J. P. Bergman, and P. Skytt, Mater. Sci. Forum, 353, 727 (2001). [DOI: https://doi.org/10.4028/www.scientific.net/MSF.353-356.727]