DOI QR코드

DOI QR Code

0.25 ㎛ GaAs pHEMT 공정을 이용한 X-대역 코아-칩의 설계

Design of X-band Core Chip Using 0.25-㎛ GaAs pHEMT Process

  • Kim, Dong-Seok (Department of Radio Science & Engineering, Chungnam National University) ;
  • Lee, Chang-Dae (Department of Radio Science & Engineering, Chungnam National University) ;
  • Lee, Dong-Hyun (Department of Radio Science & Engineering, Chungnam National University) ;
  • Yeom, Kyung-Whan (Department of Radio Science & Engineering, Chungnam National University)
  • 투고 : 2018.03.13
  • 심사 : 2018.04.18
  • 발행 : 2018.05.31

초록

본 논문에서는 Win 사의 상용 $0.25{\mu}m$ GaAs pHEMT 공정 기술을 이용하여 X-대역(10.5~13 GHz)에서 동작하는 수신부 코아-칩의 설계 및 제작을 보였다. X-대역 코아-칩은 저잡음증폭기, 4-비트 위상천이기, 직렬-병렬 컨버터(SPC: Serial to parallel data converter)로 구성되며, 크기는 $1.75{\times}1.75mm^2$로 지금까지 보고된 코아-칩 중 가장 소형의 크기를 갖는다. 사용 주파수 대역에서 이득 및 잡음지수는 각각 10 dB 이상, 2 dB 미만, 입출력 반사손실은 10 dB 미만이다. RMS 위상 오차는 12.5 GHz에서 $5^{\circ}$ 미만, P1dB는 2 dBm으로 타 코아-칩과 대등한 성능을 갖는다. 제작된 코아칩은 조립의 편의를 제공하기 위해 $3{\times}3mm^2$ 크기를 갖는 QFN 패키지로 패키지되었으며, 패키지된 코아-칩의 성능은 칩-자체의 성능과 거의 같음을 확인하였다.

We herein present the design and fabrication of a Rx core chip operating in the X-band (10.5~13 GHz) using Win's commercial $0.25-{\mu}m$ GaAs pHEMT process technology. The X-band core chip comprises a low-noise amplifier, a four-bit phase shifter, and a serial-to-parallel data converter. The size is $1.75mm{\times}1.75mm$, which is the state-of-the-art size. The gain and noise figure are more than 10 dB but less than 2 dB, and both the input and output return losses are less than 10 dB. The RMS phase error is less than $5^{\circ}$, and the P1dB is 2 dBm at 12.5 GHz, the performance of which is equivalent to other GaAs core chips. The fabricated core chip was packaged in a QFN package type with a size of $3mm{\times}3mm$ for the convenience of assembly. We confirmed that the performance of the packaged core chip was almost the same as that of the chip itself.

키워드

참고문헌

  1. U. Schmid, H. Sledzik, P. Schuh, J. Schroth, M. Oppermann, and P. Bruckner, et al., "Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications," IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 8, pp. 3043-3051, Aug. 2013. https://doi.org/10.1109/TMTT.2013.2268055
  2. A. Bettidi, D. Carosi, F. Corsaro, L. Marescialli, P. Romanini, and A. Nanni, "MMIC chipset for wideband multifunction T/R module," in 2011 IEEE MTT-S International Microwave Symposium, Baltimore, MD, Sep. 2011, pp. 1-4.
  3. A. P. de Hek, M. Rodenburg, and F. E. van Vliet, "Lowcost S-band multi-function MMIC," in 2008 European Microwave Integrated Circuit Conference, Amsterdam, Oct. 2008, pp. 262-265.
  4. A. de Boer, K. Mouthaan, "GaAs mixed signal multifunction X-band MMIC with 7 bit phase and amplitude control and integrated serial to parallel converter," in 2000 30th European Microwave Conference, Paris, France, Oct. 2000, pp. 1-4.
  5. M. van Heijningen, A. De Boer, J. A. Hoogland, M. Van Wanum, A. P. De Hek, and F. Van Vliet, et al., "Multi function and high power amplifier chipset for X-band phased array frontends," in 2006 European Microwave Integrated Circuits Conference, Manchester, Sep. 2006, pp. 237-240.
  6. OMMIC, "CGY2179UH/C1, 4-bit Ku-Band Core Chip," 2014. Available: http://www.ommic.com.
  7. OMMIC, "CGY2179HV, 4-bit Ku-Band Core Chip," 2014. Available: http://www.ommic.com.
  8. WIN Semiconductor, PD25-00, 0.25 ${\mu}m$m InGaAs pHEMT Enhancement/Depletion-Mode Device(E/D-Mode) Device Model Handbook, Ver. 1.4.2, Taoyuan City, Taiwan, Nov. 2013.
  9. K. W. Yeom, Microwave Circuit Design: A Practical Approach using ADS, Prentica Hall Press, 2015.
  10. C. F. Campbell, S. A. Brown, "A compact 5-bit phaseshifter MMIC for K-band satellite communication systems," IEEE Transactions on Microwave Theory and Techniques, vol. 48, no. 12, pp. 2652-2656, Dec. 2000. https://doi.org/10.1109/22.899026
  11. 이창대, 이동현, 염경환, "GaAs pHEMT를 이용한 직-병렬변환기 설계," 한국전자파학회논문지, 29(3), pp. 171-183, 2018년 3월. https://doi.org/10.5515/KJKIEES.2018.29.3.171