Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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Annealing of Sn Doped ZnO Thin Films Grown by Radio Frequency Powder Sputtering

라디오주파수 분말 스퍼터링 방법으로 성장시킨 주석을 도핑한 산화아연 박막의 열처리

  • Lee, Haram (Department of Materials Science and Engineering, Chosun University) ;
  • Jeong, Byeong Eon (Department of Materials Science and Engineering, Chosun University) ;
  • Yang, Myeong Hun (Department of Materials Science and Engineering, Chosun University) ;
  • Lee, Jong Kwan (Department of Materials Science and Engineering, Chosun University) ;
  • Choi, Young Bin (Department of Materials Science and Engineering, Chosun University) ;
  • Kang, Hyon Chol (Department of Materials Science and Engineering, Chosun University)
  • 이하람 (조선대학교 공과대학 재료공학과) ;
  • 정병언 (조선대학교 공과대학 재료공학과) ;
  • 양명훈 (조선대학교 공과대학 재료공학과) ;
  • 이종관 (조선대학교 공과대학 재료공학과) ;
  • 최영빈 (조선대학교 공과대학 재료공학과) ;
  • 강현철 (조선대학교 공과대학 재료공학과)
  • Received : 2018.04.20
  • Accepted : 2018.05.04
  • Published : 2018.05.30
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Abstract

We report the post-annealing effect of Sn doped ZnO (ZnO:Sn) thin film grown on sapphire (001) substrate using radio-frequency powder sputtering method. During thermal annealing in a vacuum atmosphere, the ZnO:Sn thin film is transformed into a porous thin film. Based on X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analyses, a possible mechanism for the production of pores is presented. Sn atoms segregate to form clusters that act as catalysts to dissociate Zn-O bonds. The Zn and O atoms subsequently vaporize, leading to the formation of pores in the ZnO:Sn thin film. We also found that Sn clusters were oxidized to form SnO or $SnO_2$ phases.

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References

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