Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Investigation of GaN Negative Capacitance Field-Effect Transistor Using P(VDF-TrFE) Organic/Ferroelectric Material

P(VDF-TrFE) 유기물 강유전체를 활용한 질화갈륨 네거티브 커패시턴스 전계효과 트랜지스터

  • Han, Sang-Woo (School of Electronic and Electrical Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
  • Received : 2018.03.09
  • Accepted : 2018.03.16
  • Published : 2018.03.31
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Abstract

In this work, we developed P(VDF-TrFE) organic/ferroelectric material based metal-ferroelectric-metal (MFM) capacitors in order to improve the switching characteristics of gallium nitride (GaN) heterojunction field-effect transistors (HFET). The 27 nm-thick P(VDF-TrFE) MFM capacitors exhibited about 60 ~ 96 pF capacitance with a polarization density of $6{\mu}C/cm^2$ at 4 MV/cm. When the MFM capacitor was connected in series with the gate electrode of GaN HFET, the subthreshold slope decreased from 104 to 82 mV/dec.

본 논문에서는 P(VDF-TrFE)유기물 강유전체 기반 metal-ferroelectric-metal (MFM) capacitor 와 차세대 반도체 물질인 질화갈륨 반도체를 활용한 네거티브 커패시턴스 전계효과 트랜지스터를 제작 및 분석 하였다. 27 nm의 두께의 P(VDF-TrFE) MFM 커패시터의 분극지수는 4 MV/cm에서 $6{\mu}C/cm^2$ 값을 나타내었으며 약 65 ~ 95 pF의 커패시턴스 값을 나타내었다. 강유전체의 커패시턴스와 전계효과 트랜지스터의 커패시턴스 매칭을 분석하기 위해 제작된 P(VDF-TrFE) MFM 커패시터는 GaN 전계효과 트랜지스터의 게이트 전극에 집적화 되었으며 집적화되기 전 104 mV/dec 의 문턱전압 이하 기울기에서 82 mV/dec 값으로 개선된 효과를 보였다.

Keywords

References

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