Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
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Relation Between Wire Sawing-damage and Characteristics of Single Crystalline Silicon Solar-cells

와이어 소잉 데미지 층이 단결정 실리콘 태양전지 셀 특성에 미치는 영향

  • Kim, Il-Hwan (Department of Electrics and Computer Engineering, Hanyang University) ;
  • Park, Jun-Seong (Department of Electrics and Computer Engineering, Hanyang University) ;
  • Park, Jea-Gun (Department of Electrics and Computer Engineering, Hanyang University)
  • 김일환 (전자컴퓨터통신공학과, 한양대학교) ;
  • 박준성 (전자컴퓨터통신공학과, 한양대학교) ;
  • 박재근 (전자컴퓨터통신공학과, 한양대학교)
  • Received : 2017.12.08
  • Accepted : 2018.01.24
  • Published : 2018.03.31
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Abstract

The dependency of the electrical characteristics of silicon solar-cells on the depth of damaged layer induced by wire-sawing process was investigated. To compare cell efficiency with residual sawing damage, silicon solar-cells were fabricated by using as-sawn wafers having different depth of saw damage without any damaged etching process. The damaged layer induced by wire-sawing process in silicon bulk intensely influenced the value of fill factor on solar cells, degrading fill factor to 57.20%. In addition, the photovoltaic characteristics of solar cells applying texturing process shows that although the initial depth of saw-damage induced by wire-sawing process was different, the value of short-circuit current, fill-factor, and power-conversion-efficiency have an almost same, showing ~17.4% of cell efficiency. It indicated that the degradation of solar-cell efficiency induced by wire-sawing process could be prevented by eliminating all damaged layer through sufficient pyramid-surface texturing process.

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References

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