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Thermodynamic Prediction of TaC CVD Process in TaCl5-C3-H6-H2 System

TaCl5-C3-H6-H2 계에서 TaC CVD 공정의 열역학 해석

  • Kim, Hyun-Mi (Icheon Branch, Korea Institute of Ceramic Engineering & Technology) ;
  • Choi, Kyoon (Icheon Branch, Korea Institute of Ceramic Engineering & Technology) ;
  • Shim, Kwang-Bo (Division of Materials Science and Engineering, Hanyang University) ;
  • Cho, Nam-Choon (The 4th R&D Institute, Agency for Defense Development) ;
  • Park, Jong-Kyoo (The 4th R&D Institute, Agency for Defense Development)
  • 김현미 (한국세라믹기술원 이천분원) ;
  • 최균 (한국세라믹기술원 이천분원) ;
  • 심광보 (한양대학교 신소재공학부) ;
  • 조남춘 (국방과학연구소 제4기술연구본부) ;
  • 박종규 (국방과학연구소 제4기술연구본부)
  • Received : 2017.11.20
  • Accepted : 2017.11.30
  • Published : 2018.02.27

Abstract

An ultra-high temperature ceramic, tantalum carbide, has received much attention for its favorable characteristics: a superior melting point and chemical compatibility with carbon and other carbides. One drawback is the high temperature erosion of carbon/carbon (C/C) composites. To address this drawback, we deposited TaC on C/C with silicon carbide as an intermediate layer. Prior to the TaC deposition, the $TaCl_5-C_3H_6-H_2$ system was thermodynamically analyzed with FactSage 6.2 and compared with the $TaCl_5-CH_4-H_2$ system. The results confirmed that the $TaCl_5-C_3H_6-H_2$ system had a more realistic cost and deposition efficiency than $TaCl_5-CH_4-H_2$. A dense and uniform TaC layer was successfully deposited under conditions of Ta/C = 0.5, $1200^{\circ}C$ and 100 torr. This study verified that the thermodynamic analysis is appropriate as a guide and prerequisite for carbide deposition.

Keywords

References

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