반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

누설전류차단 쇼키접합 트랜지스터 전달특성

Transistor Characteristics by the Effect of Leakage Current Cutoff of Schottky Contact

  • Oh, Teresa (Division of Semiconductor, Choengju University)
  • 투고 : 2018.06.08
  • 심사 : 2018.06.20
  • 발행 : 2018.06.30
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초록

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

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참고문헌

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