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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET

  • Kim, Minki (ICT Materials & Components Research Laboratory, ETRI) ;
  • Park, Youngrak (ICT Materials & Components Research Laboratory, ETRI) ;
  • Park, Junbo (ICT Materials & Components Research Laboratory, ETRI) ;
  • Jung, Dong Yun (ICT Materials & Components Research Laboratory, ETRI) ;
  • Jun, Chi-Hoon (ICT Materials & Components Research Laboratory, ETRI) ;
  • Ko, Sang Choon (ICT Materials & Components Research Laboratory, ETRI)
  • Received : 2016.06.22
  • Accepted : 2017.01.04
  • Published : 2017.04.01
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Abstract

We propose pulse-mode dynamic $R_on$ measurement as a method for analyzing the effect of stress on large-scale high-power AlGaN/GaN HFETs. The measurements were carried out under the soft-switching condition (zero-voltage switching) and aimed to minimize the self-heating problem that exists with the conventional hard-switching measurement. The dynamic $R_on$ of the fabricated AlGaN/GaN MIS-HFETs was measured under different stabilization time conditions. To do so, the drain-gate bias is set to zero after applying the off-state stress. As the stabilization time increased from $ 0.1{\mu}s$ to 100 ms, the dynamic $R_on$ decreased from $160\Omega$ to $2\Omega$. This method will be useful in developing high-performance GaN power FETs suitable for use in high-efficiency converter/inverter topology design.

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References

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