Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Co- and Cu-Doped Nickel Manganite System Thick Films for Infrared Detectors

  • Lee, Dong-Jin (Engineering Research Institute, Department Materials Engineering and Convergence Technology, Gyeongsang National University) ;
  • Lee, Sung-Gap (Engineering Research Institute, Department Materials Engineering and Convergence Technology, Gyeongsang National University) ;
  • Kim, Kyeong-Min (Engineering Research Institute, Department Materials Engineering and Convergence Technology, Gyeongsang National University) ;
  • Kwon, Min-Su (Engineering Research Institute, Department Materials Engineering and Convergence Technology, Gyeongsang National University)
  • Received : 2017.05.24
  • Accepted : 2017.07.11
  • Published : 2017.10.25
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Abstract

$Ni_{0.79}Co_{0.15-x}Cu_xMn_{2.06}O_4$ ($0{\leq}x{\leq}0.09$) thick films were fabricated using the conventional solid-state reaction method and screen-printing method. Structural and electrical properties of specimens based on the amount of Cu were observed in order to investigate their applicability in the infrared detector. All specimens showed a single spinel phase with a homogeneous cubic structure. As the amount of Cu increased, the average grain size increased and was found to be approximately $5.01{\mu}m$ for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen. The thickness of all specimens was approximately $55{\sim}56{\mu}m$. As Cu content increased, the resistivity and TCR properties at room temperature decreased, and these values for the $Ni_{0.79}Co_{0.06}Cu_{0.09}Mn_{2.06}O_4$ specimen were $502{\Omega}-cm$ and $-3.32%/^{\circ}C$, respectively. The responsivity and noise properties decreased with an increase in Cu content, with the specimen with a Cu content of x=0.09 showing 0.0183 V/W and $5.21{\times}10^{-5}V$, respectively.

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