참고문헌
- U. K. Mishra, P. Parikh, and Y. Wu, "AlGaN/GaN HEMTs-an overview of device operation and applications", Proc. IEEE, Vol. 90, No. 6, pp. 1022-1031, June 2002. https://doi.org/10.1109/JPROC.2002.1021567
- L. F. Eastman and U. K. Mishra, "The toughest yet [GaN Transistor]", IEEE spect., Vol. 39, No. 5, pp. 29-33, May 2002. https://doi.org/10.1109/MSPEC.2002.1021952
- R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and M. S. Shur, "High-temperature performance of AlGaN/GaN HFET's on SiC substrates", IEEE Electron Device Lett., Vol. 18, No. 10, pp. 492-494, October 1997. https://doi.org/10.1109/55.624930
- O. Aktas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev, and H. Morkoc, "High-temperature characteristics of AlGaN/GaN modulation doped field-effect transistors", Appl. Phys. Lett., Vol. 69, No. 25, pp. 3872-3874, December 1996. https://doi.org/10.1063/1.117133
- J. Mararo, G. Nicolas, D. M. Nhut, S. Forestier, S. Rochette, O. Vendier, D. Langrez, J. Cazaux, and M. Feudale, "GaN for space application: Almost ready for flight", Int. J. Microw. Wirel., Vol. 2, No. 1, pp. 121-133, April 2010. https://doi.org/10.1017/S1759078710000206
- W. Choi, H. Ryu, N. Jeon, M. Lee, H.-Y. Cha, and K.-S. Seo, "Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNX as an Interfacial Layer", IEEE Electron Device Lett., Vol. 35, No. 1, pp. 30-32, January 2014. https://doi.org/10.1109/LED.2013.2291551
- B. D. Weaver, T. J. Anderson, A. D. Koehler, J. D. Greenlee, J. K. Hite, D. I. Shahin, F. J. Kub, and K. D. Hobart, "On the radiation tolerance of AlGaN/GaN HEMTs", J. Solid-State Sci. Technol., Vol. 5, No. 7, pp. Q208-Q212, June 2016. https://doi.org/10.1149/2.0281607jss
- L. Lv, X. Ma, J. Zhang, Z. Bi, L. Liu, H. Shan, and Y. Hao, "Proton Irradiation Effects on AlGaN/AlN/GaN Heterojunctions", IEEE Trans. Nucl. Sci., Vol. 62, No. 1, pp. 300-305, February 2015. https://doi.org/10.1109/TNS.2014.2374178
- J. Chen, Y. S. Puzyrev, R. Jiang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, A. R. Arehart, S. A. Ringel, P. Saunier, and C. Lee, "Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs", IEEE Trans. Nucl. Sci., Vol. 62, No. 6, pp. 2423-2430, December 2015. https://doi.org/10.1109/TNS.2015.2488650
- O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undopoed and doped AlGaN/GaN heterostructures", J. Appl. Phys., Vol. 78, No. 1, pp. 334-344, January 2000.
- I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", J. Appl. Phys., Vol. 86, No. 8, pp. 4520-4526, October 1999. https://doi.org/10.1063/1.371396
-
B. R. Park, J.-G. Lee, W. Choi, H. Kim, K.-S. Seo, and H.-Y. Cha, "High-quality ICPCVD
$SiO_2$ for normally-off AlGaN/GaN-on-Si recessed MOSHFETs", IEEE Electron Device Lett., Vol. 34, No. 3, pp. 354-356, March 2013. https://doi.org/10.1109/LED.2012.2236678 - K. J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang, Q. Zhou, C. Zhou, B. K. Li, and J. N. Wang, "Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology", in Proc. IEEE Int. Electron Devices Meeting(IEDM), pp. 19.4.1-19.4.4, December 2011.
- Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, "Gate Injection Transistor (GIT)-A normally-off AlGaN/GaN Power Transistor Using Conductivity Modulation", IEEE Trans. Electron Devices, Vol. 54, No. 12, pp. 3393-3399, December 2007. https://doi.org/10.1109/TED.2007.908601
- X. Huang, Z. Liu, Q. Li, and F. C. Lee, "Evaluation and application of 600 V GaN HEMT in cascade structure", IEEE Trans. Power Electron., Vol. 29, No. 5, pp. 2453-2461, May 2014. https://doi.org/10.1109/TPEL.2013.2276127
-
B. Luo, J. Kim, F. Ren, J. K. Gillespie, R. C. Fitch, J. Sewell, R. Dettmer, G. D. Via, A. Crespo, T. J. Jenkins, B. P. Gila, A. H. Onstine, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, and R. Wilkins, "Electrical characteristics of proton-irradiated
$Sc_2O_3$ passivated AlGaN/GaN high electron mobility transistors", Appl. Phys. Lett., Vol. 82, No. 9, pp. 1428-1430, March 2003. https://doi.org/10.1063/1.1559631 - L. Liu, C.-F. Lo, Y. Xi, Y. Wang, F. Ren, S. J. Pearton, H.-Y. Kim, J. Kim, R. C. Fitch, D. E. Walker Jr., K. D. Chabak, J. K. Gillespie, S. E. Tetlak, G. D. Via, A. Crespo, I. I. Kravchenko, "Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistor", J. Vac. Sci. Technol. B., Vol. 31, No. 2, pp. 022201-1-022201-7, January 2013. https://doi.org/10.1116/1.4788904
- B. D. White, M. Bataiev, S. H. Goss, X. Hu, A. Karmarkar, D. M. Fleetwood, R. D. Schrimpf, W. J. Schaff, and L. J. Brillson, "Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence", IEEE Trans. Nucl. Sci., Vol. 50, No. 6, pp. 1934-1941, December 2003. https://doi.org/10.1109/TNS.2003.821827
- http://www.srim.org/
- J. R. Srour, C. J. Marshall, and P. W. Marshall, "Review of Displacement Damage Effects in Silicon Devices", IEEE Trans. Nucl. Sci., Vol. 50, No. 3, pp. 653-670, June 2003. https://doi.org/10.1109/TNS.2003.813197
- G. P. Summers, B. A. Burke, M. A. Xapsos, C. J. Dale, P. W. Marshall, and E. L. Petersen, "Displacement Damage In GaAs Structures", IEEE Trans. Nucl. Sci., Vol. 35, No. 6, pp. 1221-1226, December 1988. https://doi.org/10.1109/23.25443
- B. D. Weaver, P. A. Martin, J. B. Boos, and C. D. Cress, "Displacement damage effects in AlGaN/GaN high electron mobility transistors", IEEE Trans. Nucl. Sci., Vol. 59, No. 6, pp. 3077-3080, December 2012. https://doi.org/10.1109/TNS.2012.2224371
- J. E. Ayers, "The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction", J. Crystal Growth, Vol. 135, No. 1-2, pp. 71-77, January 1994. https://doi.org/10.1016/0022-0248(94)90727-7
- R. Takasu, Y. Tosaka, H. Hukuda, and Y. Kataoka, "A Novel Method for Accurately Estimating Alpha-Induced Soft Error Rates", in Proc. IEEE Int. Reliability Physics Symposium(IRPS), pp. 230-233, April 2005.
- J. L. Autran, D. Munteanu, P. Roche, G. Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, E. Yakushev, S. Rozov, P. Loaiza, G. Warot, and M. Zampaolo, "Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuit at ground level", Microelectron. Reliab., Vol. 50, No. 9-11, pp. 1822-1831, September-November 2010. https://doi.org/10.1016/j.microrel.2010.07.033