참고문헌
- M. Bickermann, S. Schmidt, B.M. Epelbaum, P. Heimann, S. Nagata and A. Winnacker, "Wet KOH etching of freestanding AlN single crystals", J. Cryst. Growth 300 (2007) 299. https://doi.org/10.1016/j.jcrysgro.2006.12.037
- M. Miyanaga, N. Mizuhara, S. Fujiwara, M. Shimazu, H. Nakahata and T. Kawase, "Evaluation of AlN single crystal grown by sublimation method", J. Cryst. Growth 300 (2007) 45. https://doi.org/10.1016/j.jcrysgro.2006.10.233
- Yu.N. Makarov, O.V. Avdeev, I.S. Barash, D.S. Bazarevskiy, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, M.G. Ramm, S. Davis, G. Huminic and H. Helava, "Experimental and theoretical analysis of sublimation growth of AlN bulk crystals", J. Cryst. Growth 310 (2008) 881. https://doi.org/10.1016/j.jcrysgro.2007.11.059
- R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, B. Moody, R. Schlesser, R. Kirste, A. Hoffmann and Z. Sitar, "265 nm light emitting diodes on AlN single crystal substrates: growth and characterization", J. Opt. Sci. America CLEO (2011) 1.
- P. Cyril, F. Shinya, I. Tetsuhiko, F. Takehiko, K. Myunghee, N. Yosuke, H. Akira, I. Masamichi, I. Motoaki, K. Satoshi, A. Isamu and A. Hiroshi, "Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes", J. Phys. Status Solidi A 208 (2011) 1594. https://doi.org/10.1002/pssa.201001037
- D.K. Oh, B.G. Choi, S.K. Kang, S.Y. Kim, S.A. Kim, S.K. Lee and K.B. Shim, "Surface morphology variation during wet etching of GaN epilayer grown by HVPE", J. Korean Cryst. Growth Cryst. Technol. 22 (2012) 261. https://doi.org/10.6111/JKCGCT.2012.22.6.261
- D. Zhuang, J.H. Edgar, B. Strojek, J. Chaudhuri and Z. Rek, "Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy", J. Cryst. Growth 262 (2004) 89. https://doi.org/10.1016/j.jcrysgro.2003.10.051
- J.L. Weyher, P.D. Brown, J.L. Rouviere, T. Wosinski, A.R.A. Zauner and I. Grzegory, "Recent adavances in defect-selective etching of GaN", J. Cryst. Growth 210 (2000) 151. https://doi.org/10.1016/S0022-0248(99)00669-7
- J.H. Park, Y.P. Hong, C.W. Park, H.M. Kim, D.K. Oh, B.G. Choi, S.K. Lee and K.B. Shim, "The molten KOH/NaOH wet chemical etching of HVPE-grown GaN", J. Korean Cryst. Growth Cryst. Technol. 24 (2014) 135. https://doi.org/10.6111/JKCGCT.2014.24.4.135
- W. Guo, J. Xie, C. Akoula, S. Mita, A. Rice, J. Tweedie, I. Bryan, R. Collazo and Z. Sitar, "Comparative study of etching high crystalline quality AlN and GaN", J. Cryst. Growth 366 (2013) 20. https://doi.org/10.1016/j.jcrysgro.2012.12.141
- B. Liu, J. Gao, K.M. Wu and C. Liu, "Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy", J. Solid State Communications 149 (2009) 715. https://doi.org/10.1016/j.ssc.2009.02.008
- G. Stephan, T. Robert, E. Kenneth, A. Glen, B. Sandra, J. Grandusky, A. Joseph and J. Leo, "The progress of AlN bulk growth and epitaxy for electronic applications", J. phys. Status Solidi A 206 (2009) 1153. https://doi.org/10.1002/pssa.200880758
- W. Ying, J. Peng, L. Peng, L. Wei, L. Bin, L. Fang and W. Guo, "Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition", J. Chin. Phys. B 23 (2014) 087810. https://doi.org/10.1088/1674-1056/23/8/087810
- S.M. Kang, "A study on the growth of AlN single crystals", J. Korean Cryst. Growth Cryst. Technol. 23 (2013) 279. https://doi.org/10.6111/JKCGCT.2013.23.6.279
- S.M. Kang, "A study on growing of bulk AlN single crystals grown having a (011) growth face of by PVT method", J. Korean Cryst. Growth Cryst. Technol. 25 (2015) 32. https://doi.org/10.6111/JKCGCT.2015.25.1.032
- H. Miyake, C. Hung Lin, K. Tokoro and K. Hiramatsu, "Preparation of high-quality AlN on sapphire by hightemperature face-to-face annealing", J. Cryst. Growth 456 (2016) 155. https://doi.org/10.1016/j.jcrysgro.2016.08.028