한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제30권8호
  • /
  • Pages.491-495
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  • 2017
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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전자 수송층을 삽입한 용액 공정형 산화물 트랜지스터의 특성 평가

Characterization of Solution-Processed Oxide Transistor with Embedded Electron Transport Buffer Layer

  • 김한상 (충북대학교 전자정보대학) ;
  • 김성진 (충북대학교 전자정보대학)
  • Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University) ;
  • Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
  • 투고 : 2017.03.21
  • 심사 : 2017.04.20
  • 발행 : 2017.08.01
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초록

We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

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