DOI QR코드

DOI QR Code

Methodology for Extracting Trap Depth using Statistical RTS Noise Data of Capture and Emission Time Constant

  • Oh, Dong-Jun (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Kwon, Sung-Kyu (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Song, Hyeong-Sub (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Kim, So-Yeong (Division of Electronics, Radio Science & Engineering, and Information Communications Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • Received : 2016.08.25
  • Accepted : 2016.12.27
  • Published : 2017.04.30

Abstract

In this paper, we propose a novel method for extracting an accurate depth of a trap that causes RTS(Random Telegraph Signal) noise. The error rates of the trap depth rely on the mean time constants and its ratio. Here, we determined how many data of the capture and emission time constant are necessary in order to reduce the trap depth error caused by an inaccurate mean time constant. We measured the capture and emission time constants up to 100,000 times in order to ensure that the samples had statistical meaning. As a result, we demonstrated that at least 1,000 samples are necessary to satisfy less than 10% error for trap depth. This result could be used to improve the accuracy of RTS noise analysis.

Keywords

References

  1. V. Haartman, et al., "Low-Frequency Noise in Advanced MOS Devices," Springer Science & Business Media, 2007.
  2. F. N. Hooge, et al., "Experimental Studies on 1/f Noise," Reports on Progress in Physics, Vol.44, No. 5, pp.479-532, 1981. https://doi.org/10.1088/0034-4885/44/5/001
  3. C. Leyris, et al., "Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels," Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European. IEEE, pp.376-379, Sept., 2006.
  4. S. Balatti, et al., "Voltage-Dependent Random Telegraph Noise (RTN) in HfO x Resistive RAM," Reliability Physics Symposium (IRPS), 2014 IEEE International, pp.MY.4.1-MY.4.6, Jun., 2014.
  5. E. Simoen, et al., "Low-Frequency Noise of Advanced Memory Devices," Noise and Fluctuations (ICNF), 2015 International Conference on. IEEE, pp.1-6, Jun., 2015.
  6. K. S. Ralls, et al., "Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1/f) Noise," Physical Review /letters, Vol.52, No.3, pp.228-223, Jan., 1984. https://doi.org/10.1103/PhysRevLett.52.228
  7. K. K. Hung, et al., "Random Telegraph Noise of Deep-Submicrometer MOSFETs," IEEE Electron Device Letters, Vol.11, No.2, pp.90-92, Feb., 1990. https://doi.org/10.1109/55.46938
  8. Z. M. Shi, et al., "Low Frequency Noise and Quantum Transport in 0.1 mu m n-MOSFETs," Electron Devices Meeting, 1991. IEDM'91. Technical Digest., International. IEEE, pp.363-366, Dec., 1991.
  9. N. V. Amarasinghe, et al., "Complex Random Telegraph Signals in 0.06 ${\mu}m$ 2 MDD n-MOSFETs," Solid-State Electronics, Vol.44, pp.1013-1019, Jun., 1999.
  10. L. Hochul, et al., "Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs," IEICE Transactions on Electronics, Vol.90, No.5, pp.968-972, May., 2007.
  11. E. Simoen, et al., "Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra," IEEE Trans. Electron Devices, Vol.61, No.2, pp.634-637, Feb., 2014. https://doi.org/10.1109/TED.2013.2295025
  12. S. Lee, et al., "Characterization of Oxide Traps Leading to RTN in High-k and Metal Gate MOSFETs," IEEE International Electron Devices Meeting (IEDM), Dec., 2009.
  13. M. J. Kirton, et al., "Capture and Emission Kinetics of Individual Si: SiO2 Interface States," Applied Physics Letters, Vol.48, No.19, pp.1270-1272, Mar., 1986. https://doi.org/10.1063/1.97000
  14. Z. Shi, et al., "Random Telegraph Signals in Deep Submicron n-MOSFET's" IEEE Trans. Electron Devices, Vol.41, No.7, pp.1161-1168, Jul., 1994. https://doi.org/10.1109/16.293343
  15. V. A. Nuditha, et al., "Extraction of Oxide Trap Properties using Temperature Dependence of Random Telegraph Signals in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors" Journal of Applied Physics, Vol.89, No.10, pp.5526-5532, Feb., 2001. https://doi.org/10.1063/1.1367404
  16. J. Pavelka, et al., "RTS Noise in MOSFETs: Mean Capture Time and Trap Position," Noise and Fluctuations (ICNF), 2015 International Conference on. IEEE, Jun., 2015.
  17. D. Veksler, et al., "Understanding Noise Measurements in MOSFETs: The Role of Traps Structural Relaxation," 2010 IEEE International Reliability Physics Symposium, pp.73-79, May., 2010.
  18. J. P. Campbell, et al., "The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs," IEEE International Integrated Reliability Workshop Final Report, pp.105-109, Oct., 2008.
  19. J. P. Campbell, et al., "Random Telegraph Noise in Highly Scaled nMOSFETs," Reliability Physics Symposium (IRPS), 2009 IEEE International, pp.382-388, Apr., 2009.
  20. D. Kang et al., "Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps Through the Random Telegraph Noise," Japanese Journal of Applied Physics, Vol.48, No.4S, p.04C034, Apr., 2009.
  21. M. J. Kirton, et al., "Noise in Solid-State Microstructures: A New Perspective on Individual Defects, Interface Sates and Low-Frequency (1/f) Noise," Advances in Physics, Vol.38, No.4, pp.367-468, Nov., 1989. https://doi.org/10.1080/00018738900101122