한국재료학회지 (Korean Journal of Materials Research)

  • 제27권4호
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  • Pages.216-220
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  • 2017
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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Zn-Sn-O 박막 트랜지스터의 전기적 특성에 대한 전자빔 조사의 영향

Influence of Electron Beam Irradiation on the Electrical Properties of Zn-Sn-O Thin Film Transistor

  • 조인환 (한국원자력연구원 중성자응용연구부) ;
  • 조경일 (한국원자력연구원 중성자응용연구부) ;
  • 최준혁 (한국원자력연구원 중성자응용연구부) ;
  • 박해웅 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 김찬중 (한국원자력연구원 중성자응용연구부) ;
  • 전병혁 (한국원자력연구원 중성자응용연구부)
  • Cho1, In-Hwan (Neutron Utilization Research Division, Korea Atomic Energy Research Institute) ;
  • Jo, Kyoung-Il (Neutron Utilization Research Division, Korea Atomic Energy Research Institute) ;
  • Choi, Jun Hyuk (Neutron Utilization Research Division, Korea Atomic Energy Research Institute) ;
  • Park, Hai-Woong (Department of Energy Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Kim, Chan-Joong (Neutron Utilization Research Division, Korea Atomic Energy Research Institute) ;
  • Jun, Byung-Hyuk (Neutron Utilization Research Division, Korea Atomic Energy Research Institute)
  • 투고 : 2017.01.25
  • 심사 : 2017.03.14
  • 발행 : 2017.04.27
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초록

The effect of electron beam (EB) irradiation on the electrical properties of Zn-Sn-O (ZTO) thin films fabricated using a sol-gel process was investigated. As the EB dose increased, the saturation mobility of ZTO thin film transistors (TFTs) was found to slightly decrease, and the subthreshold swing and on/off ratio degenerated. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies ($V_O$) increased from 10.35 to 12.56 % as the EB dose increased from 0 to $7.5{\times}10^{16}electrons/cm^2$. Also, spectroscopic ellipsometry analysis showed that the optical band gap varied from 3.53 to 3.96 eV with increasing EB dose. From the results of the electrical property and XPS analyses of the ZTO TFTs, it was found that the electrical characteristic of the ZTO thin films changed from semiconductor to conductor with increasing EB dose. It is thought that the electrical property change is due to the formation of defect sites like oxygen vacancies.

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참고문헌

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