전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제66권3호
  • /
  • Pages.540-544
  • /
  • 2017
  • /
  • 1975-8359(pISSN)
  • /
  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지
DOI QR코드

DOI QR Code

CMOS 0.18um 공정 단위소자의 방사선 영향 분석

Analysis of Radiation Effects in CMOS 0.18um Process Unit Devices

  • Jeong, Sang-Hun (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute) ;
  • Lee, Nam-Ho (Dept. of Nuclear Convergence Technology Development Korea Atomic Energy Research Institute) ;
  • Lee, Min-Woong (Dept. of Electronic Engineering Chonbuk National University) ;
  • Cho, Seong-Ik (Dept. of Electronic Engineering Chonbuk National University)
  • 투고 : 2016.09.29
  • 심사 : 2016.11.25
  • 발행 : 2017.03.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this study, we analyzed the effects of TID(Total Ionizing Dese) and TREE(Transient Radiation Effects on Electronics) on nMOSFET and pMOSFET fabricated by 0.18um CMOS process. The size of nMOSFET and pMOSFET is 100um/1um(W/L). The TID test was conducted up to 1 Mrad(Si) with a gamma-ray(Co-60). During the TID test, the nMOSFET generated leakage current proportional to the applied dose, but that of the pMOSFET was remained in a steady state. The TREE test was conducted at TEST LINAC in Pohang Accelerator Laboratory with a maximum dose-rate of $3.16{\times}10^8rad(si)/s$. In that test nMOESFET generated a large amount of photocurrent at a maximum of $3.16{\times}10^8rad(si)/s$. Whereas, pMOSFETs showed high TREE immunity with a little amount of photocurrent at the same dose rate. Based on the results of this experiment, we will progress the research of the radiation hardening for CMOS unit devices.

키워드

참고문헌

  1. George C. Messenger, Milton S. Ash, The effects of radiation on electronic systems, 2nd Edition, New York : Van Nostrand Reinhold, cop., 1992.
  2. T. H. Kim, H. C. Lee, "The Analysis of Total Ionizing Dose Effects on Analog-to-Digital Converter for Space Application," Journal of the Institute of Electronics Engineers, Vol. 50, no. 6, pp. 85-90, Jun. 2013.
  3. P. C. Adell, R. D. Schrimpf, W. T. Holman J. Boch, J. Stacey, P. Ribero, A. Sternberg, K. F. Galloway, "Total- Dose and Single-Event Effects in DC/DC Converter Control Circuitry," IEEE Trans. on Nuclear Science, Vol. 50, No. 6 pp. 1867-1872, December. 2003. https://doi.org/10.1109/TNS.2003.820757
  4. A. M. Chugg, "Ionizing radiation effects:a vital issue for semiconductor electronics," Engineering Science and Education Journal, Vol. 3, No. 3, June. 1994.
  5. N. H. Lee, Y. G. Hwang, J. R. Kim, S. H. Jeong, S. C. Oh, "A Study on Implementation of Transient Radiation Effects on Electronics(TREE) Assessment System," Journal of the Korea Institute of Information and Communication Engineering, Vol. 16, No. 10, pp. 2329-2334, October. 2012. https://doi.org/10.6109/jkiice.2012.16.10.2329
  6. L. D. Philipp, P. O. Lauritzen, "Irradiation Damage of MOS-FETS Operating in the Common Source Mode", IEEE Trans. on Nuclear Science, Vol. 14, No. 6, December. 1967.
  7. H. Degenhart, W. Schlosser, "Transient Effects of Pulsed Nuclear Radiation on Electronic Parts and Materials," IRE Transactions on Component Parts, Vol. 8, No. 3, pp. 123-128, September. 1961. https://doi.org/10.1109/TCP.1961.1136602
  8. L. Cohn, M. Espig, A. Wolicki, M. Simons, C. Rogers, "Transient Radiation Effects on Electronics (TREE) Handbook," Defence Nuclear Agency, December. 1995.
  9. M. W. Lee, S. M. Kim, S. H. Jeong, N. H. Lee, S. I. Cho, "0.18um CMOS의 z이온화방사선 효과 영향분석", The 23th Korean Conference on Semiconductors, February. 2016.
  10. S. H. Jeong, N. H. Lee, S. C. Oh, Y. G. Hwang, "Calibration of Pulse Radiation dose using a PIN diode", The 28th International Technical Conference on Circuits/System, Computers and Communications, pp. 1119-1121, 2013.
  11. G. Anelli, M. Campbell, M Delmastro, "Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects", IEEE Trans. on Nuclear Science, Vol. 46, No. 6, December. 1999.
  12. M. S. Lee, H. C. Lee, "Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit", IEEE Trans. on Nuclear Science, Vol. 60, No. 4, August. 2013.