참고문헌
- J. Yota, J. Hander, and A. A. Saleh, "A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films", J. Vac. Sci. Technol. A, vol. 18, No. 2, pp. 372-376, Mar. 2000. https://doi.org/10.1116/1.582195
- H. Nagel, A. G. Aberle, and R. Hezel, "Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide", Prog. Photovolt: Res. Appl., vol. 7, No. 4, pp. 245-260, Jul. 1999. https://doi.org/10.1002/(SICI)1099-159X(199907/08)7:4<245::AID-PIP255>3.0.CO;2-3
- A. G. Aberle, "Surface passivation of crystalline silicon solar cells: a review", Prog. Photovolt: Res. Appl., vol. 8, No. 5, pp. 473-487, Sep. 2000. https://doi.org/10.1002/1099-159X(200009/10)8:5<473::AID-PIP337>3.0.CO;2-D
- S. Winderbaum, F. Yun, and O. Reinhold, "Application of plasma enhanced chemical vapor deposition silicon nitride as a double layer antireflection coating and passivation layer for polysilicon solar cells", J. Vac. Sci. Technol. A, vol. 15, No. 3, pp. 1020-1025, May 1997. https://doi.org/10.1116/1.580509
- F. L. Wong, M. K. Fung, S. L. Tao, S. L. Lai, W. M. Tsang, K. H. Kong, W. M. Choy, C. S. Lee, and S. T. Lee, "Long-lifetime thin-film encapsulated organic light-emitting diodes", J. Appl. Phys., vol. 104, No. 1, pp. 014509 (4pp), Jul. 2008. https://doi.org/10.1063/1.2940727
- A. Masuda, H. Umemoto, and H. Matsumura, "Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films", Thin Solid Films, vol. 501, No. 1-2, pp. 149-153, Apr. 2006. https://doi.org/10.1016/j.tsf.2005.07.172
- M. Bavafa, H. Ilati, and B. Rashidian, "Comprehensive simulation of the effects of process conditions on plasma enhanced chemical vapor deposition of silicon nitride", Semicond. Sci. Technol., vol. 23, No. 9, pp. 095023 (19pp), Aug. 2008. https://doi.org/10.1088/0268-1242/23/9/095023
-
H. J. Kim, W. Yang, and J. Joo, "Effect of electrode spacing on the density distributions of electrons, ions, and metastable and radical molecules in
$SiH_4/NH_3/N_2/He$ capacitively coupled plasmas", J. Appl. Phys., vol. 118, No. 4, pp. 043304 (18 pp), Jul. 2015. https://doi.org/10.1063/1.4927531 - COMSOL Multiphysics Version 5.2 User Guide, Nov. 2015.
- A. O. Brezmes and C. Breitkopf, "Fast and reliable simulations of argon inductively coupled plasma using COMSOL", Vacuum, vol. 116, pp. 65-72, Jun. 2015. https://doi.org/10.1016/j.vacuum.2015.03.002
- E. Gogolides and H. H. Sawin, "Continuum modeling of radio-frequency glow discharges. I. Theory and results for electropositive and electronegative gases", J. Appl. Phys., vol 72, No. 9, pp. 3971-3987, Nov. 1992. https://doi.org/10.1063/1.352250
- E. Tatarova, F. M. Dias, E. Felizardo, J. Henriques, M. J. Pinheiro, C. M. Ferreira, and B. Gordiets, "Microwave air plasma source at atmospheric pressure: Experiment and theory", J. Appl. Phys., vol. 108, No. 12, pp. 123305 (18 pp), Dec. 2010. https://doi.org/10.1063/1.3525245
- F. J. Gordillo-Vazquez, "Air plasma kinetics under the influence of sprites", J. Phys. D: Appl. Phys., vol. 41, No. 23, pp. 234016 (33 pp), Nov. 2008. https://doi.org/10.1088/0022-3727/41/23/234016
- Q. Xiong, A. Y. Nikiforov, X. P. Lu, and C. Leys, "High-speed dispersed photographing of an open-air argon plasma plume by a grating-ICCD camera system", J. Phys. D: Appl. Phys., vol. 43, No. 41, pp. 415201 (10 pp), Sep. 2010. https://doi.org/10.1088/0022-3727/43/41/415201
-
E. Tatarova, F. M. Dias, B. Gordiets, and C. M. Ferreira, "Molecular dissociation in
$N_2-H_2$ microwave discharges", Plasma Sources Sci. Technol., vol. 14, No. 1, pp. 19-31, Feb. 2005. https://doi.org/10.1088/0963-0252/14/1/003 - A. Bogaerts, "Hybrid Monte Carlo - Fluid model for studying the effects of nitrogen addition to argon glow discharges", Spectrochim. Acta Part B, vol. 64, No. 2, pp. 126-140, Feb. 2009. https://doi.org/10.1016/j.sab.2008.11.004
- G. R. Nowling, S. E. Babayan, X. Yang, M. Moravej, R. Agarwal, and R. F. Hicks, "The reactions of silane in the afterglow of a helium-nitrogen plasma", Plasma Sources Sci. Technol., vol. 13, No. 1, pp. 156-163, Feb. 2004. https://doi.org/10.1088/0963-0252/13/1/020
- A. Dollet, J. P. Couderc, and B. Despax, "Analysis and numerical modelling of silicon nitride deposition in a plasma-enhanced chemical vapour deposition reactor. Part I: bidimensional modelling", Plasma Sources Sci. Technol., vol. 4, No. 1, pp. 94-106, Feb. 1995. https://doi.org/10.1088/0963-0252/4/1/010
- M. J. Kushner, "Simulation of the gas-phase processes in remote-plasma-activated chemical -vapor deposition of silicon dielectrics using rare gas-silane-ammonia mixtures", J. Appl. Phys., vol. 71, No. 9, pp. 4173-4189, May 1992. https://doi.org/10.1063/1.350821
-
L. Xiang-Mei, S. Yuan-Hong, J. Wei, and Y. Lin, "The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled
$SiH_4/NH_3/N_2$ plasmas: Two-dimensional simulations", Chin. Phys. B, vol. 22, No. 4, pp. 045204 (6 pp), Apr. 2013. https://doi.org/10.1088/1674-1056/22/4/045204 -
P. J. van den Oever, J. H. van Helden, J. L. van Hemmen, R. Engeln, D. C. Schram, M. C. M. van de Sanden, and W. M. M. Kessels, "N, NH, and
$NH_2$ radical densities in a remote$Ar-NH_3-SiH_4$ plasma and their role in silicon nitride deposition", J. Appl. Phys., vol. 100, No. 9, pp. 093303 (10 pp), Nov. 2006. https://doi.org/10.1063/1.2358330 - D. T. Murley, R. A. G. Gibson, B. Dunnett, A. Goodyear, and I. D. French, "Influence of gas residence time on the deposition of nitrogen-rich amorphous silicon nitride", J. Non-Cryst. Solids, vol. 187, pp. 324-328, Jan. 1995. https://doi.org/10.1016/0022-3093(95)00158-1
-
J. A. Theil, S. V. Hattangady, and G. Lucovsky, "Effects of
$NH_3$ and$N_2$ source gases and plasma excitation frequencies on the reaction chemistry for$Si_3N_4$ thin-film growth by remote plasma-enhanced chemical-vapor deposition", J. Vac. Sci. Technol. A, vol. 10, No. 4, pp. 719-727, Jul. 1992. https://doi.org/10.1116/1.577716 - D. L. Smith, "Controlling the plasma chemistry of silicon nitride and oxide deposition from silane", J. Vac. Sci. Technol. A, vol. 11, No. 4, pp. 1843-1850, Jul. 1993. https://doi.org/10.1116/1.578436
-
C. Bohm, J. Perrin, and P. R. i Cabarrocas, "Ion-induced secondary electron emission in
$SiH_4$ glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate", J. Appl. Phys., vol. 73, No. 5, pp. 2578-2580, Mar. 1993. https://doi.org/10.1063/1.353070