참고문헌
- C. C. Chang, J. S. Jeng and J. S. Chen, Thin Solid Films, 413, 46 (2002). https://doi.org/10.1016/S0040-6090(02)00342-5
- J. Kwon and Y. J. Chabal, Appl. Phys. Lett., 96, 2008 (2010).
- Y. Zhao and G. Lu, Phys. Res. B, 79, 214104 (2009). https://doi.org/10.1103/PhysRevB.79.214104
- S. M. Kim, G. R. Lee and J. J. Lee, Jpn. J. Appl. Phys., 47, 6953 (2008). https://doi.org/10.1143/JJAP.47.6953
- S. I. Nakao, M. Numata and T. Ohmi, Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap. 38, 2401 (1999). https://doi.org/10.1143/JJAP.38.2401
- K. Kim and J. Choi, in Proceedings of Non-Volatile Semiconductor Memory Workshop (Monterey, CA, February 2006) (IEEE, USA, 2006) p.9.
- L. Yu, C. Stampfl, D. Marshall, T. Eshrich, V. Narayanan, J. Rowell, N. Newman and A. Freeman, Phys. Rev. B, 65, 245110 (2002). https://doi.org/10.1103/PhysRevB.65.245110
- A. Malmros, K. Andersson and N. Rorsman, Thin Solid Films, 520, 2162 (2012). https://doi.org/10.1016/j.tsf.2011.09.050
- A. Engel, A. Aeschbacher, K. Inderbitzin, A. Schilling, K. Il'In, M. Hofherr, M. Siegel, A. Semenov and H. W. Hubers, Appl. Phys. Lett., 100, 1 (2012).
- B. J. Choi, J. Zhang, K. Norris, G. Gibson, K. M. Kim, W. Jackson, M. X. M. Zhang, Z. Li, J. J. Yang and R. S. Williams, Adv. Mater., 28, 356 (2016). https://doi.org/10.1002/adma.201503604
- T. H. Park, S. J. Song, H. J. Kim, S. G. Kim, S. Chung, B. Y. Kim, K. J. Lee, K. M. Kim, B. J. Choi and C. S. Hwang, Phys. Status Solidi Rapid Res. Lett., 9, 362 (2015). https://doi.org/10.1002/pssr.201510110
- T. H. Park, S. J. Song, H. J. Kim, S. G. Kim, S. Chung, B. Y. Kim, K. J. Lee, K. M. Kim, B. J. Choi and C. S. Hwang, Sci. Rep., 5, 15965 (2015). https://doi.org/10.1038/srep15965
- B. J. Choi, A. C. Torrezan, J. P. Strachan, P. G. Kotula, A. J. Lohn, M. J. Marinella, Z. Li, R. S. Williams and J. J. Yang, Adv. Funct. Mater., 26, 5290 (2016). https://doi.org/10.1002/adfm.201600680
- F. Chiu, Adv. Mater. Sci. Eng., 2014, 578168 (2014).
- S. Somani, A. Mukhopadhyay and C. Musgrave, J. Phys. Chem. C, 115, 11507 (2011). https://doi.org/10.1021/jp1059374
- Z. Fang, H. C. Aspinall, R. Odedra and R. J. Potter, J. Cryst. Growth, 331, 33 (2011). https://doi.org/10.1016/j.jcrysgro.2011.07.012
- B. B. Burton, A. R. Lavoie and S. M. George, J. Electrochem. Soc., 155, D508 (2008). https://doi.org/10.1149/1.2908741
- M. Ritala, P. Kalsi, D. Riihela, K. Kukli, M. Leskela and J. Jokinen, Chem. Mater., 11, 1712 (1999). https://doi.org/10.1021/cm980760x
- H. Kim, A. J. Kellock and S. M. Rossnagel, J. Appl. Phys., 92, 7080 (2002). https://doi.org/10.1063/1.1519949
- H.-S. Chung, J.-D. Kwon and S.-W. Kang, J. Electrochem. Soc., 153, C751 (2006). https://doi.org/10.1149/1.2344834
- C. M. Fang, E. Orhan, G. A. de Wijs, H. T. Hintzen, R. A. de Groot, R. Marchand, J.-Y. Saillard and G. de With, J. Mater. Chem., 11, 1248 (2001). https://doi.org/10.1039/b005751g