Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Turn-on Loss Reduction for High Voltage Power Stack Using Active Gate Driving Method

  • Kim, Jin-Hong (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Park, Joon Sung (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Gu, Bon-Gwan (Dept. of Energy Engineering, Kyungpook National University) ;
  • Won, Chung-Yuen (Dept. of Electrical and Computer Engineering, Sungkyunkwan University)
  • Received : 2016.01.29
  • Accepted : 2016.06.01
  • Published : 2017.03.01
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Abstract

This paper presents an improved approach towards reducing the switching loss of insulated gate bipolar transistors (IGBTs) for a medium-capacity-class power conditioning system (PCS). In order to improve the switching performance, the switching operation is analyzed, and based on this analysis, an improved switching method that reduces the switching time and switching loss is proposed. Compared to a conventional gate drive scheme, the switching loss, switching time, and delay are improved in the proposed gate driving method. The performance of the proposed gate driving method is verified through several experiments.

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References

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