• Title/Summary/Keyword: Insulated Gate Bipolar Transistor (IGBT) gate driver

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Research on Technical Trends of IGBT Gate Driver Unit for Railway Car (철도차량용 IGBT Gate Driver Unit 기술 동향 분석 연구)

  • Cho, In-Ho;Lee, Jae-Bum;Jung, Shin-Myung;Lee, Byoung-Hee
    • Journal of the Korean Society for Railway
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    • v.20 no.3
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    • pp.339-348
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    • 2017
  • Power supply for railway cars can be divided into propulsion system power supply and auxiliary power units (APU). The propulsion system power supply is for propulsion of railway cars, and regenerative braking; the APU provides power for the air compressor, lighting, car control and other auxiliary parts. According to high voltage and high current specifications, generally, an insulated-gate bipolar transistor (IGBT) is adopted for the switching component. For appropriate switching operation, a gate driver unit (GDU) is essentially required. In this paper, the technical trends of GDU for railway cars are analyzed and a design consideration for IGBT GDU is described.

Turn-on Loss Reduction for High Voltage Power Stack Using Active Gate Driving Method

  • Kim, Jin-Hong;Park, Joon Sung;Gu, Bon-Gwan;Won, Chung-Yuen
    • Journal of Electrical Engineering and Technology
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    • v.12 no.2
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    • pp.632-642
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    • 2017
  • This paper presents an improved approach towards reducing the switching loss of insulated gate bipolar transistors (IGBTs) for a medium-capacity-class power conditioning system (PCS). In order to improve the switching performance, the switching operation is analyzed, and based on this analysis, an improved switching method that reduces the switching time and switching loss is proposed. Compared to a conventional gate drive scheme, the switching loss, switching time, and delay are improved in the proposed gate driving method. The performance of the proposed gate driving method is verified through several experiments.

Development of a Novel 30 kV Solid-state Switch for Damped Oscillating Voltage Testing System

  • Hou, Zhe;Li, Hongjie;Li, Jing;Ji, Shengchang;Huang, Chenxi
    • Journal of Power Electronics
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    • v.16 no.2
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    • pp.786-797
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    • 2016
  • This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.

Current Sharing Control Strategy for IGBTs Connected in Parallel

  • Perez-Delgado, Raul;Velasco-Quesada, Guillermo;Roman-Lumbreras, Manuel
    • Journal of Power Electronics
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    • v.16 no.2
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    • pp.769-777
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    • 2016
  • This work focuses on current sharing between punch-through insulated gate bipolar transistors (IGBTs) connected in parallel and evaluates the mechanisms that allow overall current balancing. Two different control strategies are presented. These strategies are based on the modification of transistor gate-emitter control voltage VGE by using an active gate driver circuit. The first strategy relies on the calculation of the average value of the current flowing through all parallel-connected IGBTs. The second strategy is proposed by the authors on the basis of a current cross reference control scheme. Finally, the simulation and experimental results of the application of the two current sharing control algorithms are presented.

Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

  • Bahun, Ivan;Sunde, Viktor;Jakopovic, Zeljko
    • Journal of Power Electronics
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    • v.13 no.4
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    • pp.729-736
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    • 2013
  • Knowledge of a power semiconductor's operating temperature is important in circuit design and converter control. Designing appropriate circuitry that does not affect regular circuit operation during virtual junction temperature measurement at actual operating conditions is a demanding task for engineers. The proposed method enables virtual junction temperature estimation with a dedicated modified gate driver circuit based on real-time measurement of a semiconductor's quasi-threshold voltage. A simulation was conducted before the circuit was designed to verify the concept and to determine the basic properties and potential drawbacks of the proposed method.

Development of 200kW class electric vehicle traction motor driver based on SiC MOSFET (SiC MOSFET기반 200kW급 전기차 구동용 모터드라이버 개발)

  • Yeonwoo, Kim;Sehwan, Kim;Minjae, Kim;Uihyung, Yi;Sungwon, Lee
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.671-680
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    • 2022
  • In this paper, A 200kW traction motor driver that covers most of the traction motor specification of commercial electric vehicles (EV) is developed. In order to achieve high efficiency and high power density, a next-generation power semiconductors (Silicon carbide, SiC) are applied instead of power semiconductor(IGBT), which is Si based. Through hardware analysis for optimal use of SiC, expected efficiency and heat dissipation characteristics are obtained. A vector control algorithm for an IPMSM (Interior permanent magnet synchronous motor), which is mostly used in EV(Electric vehicle) traction motor, is implemented using DSP (Digital signal processor). In this paper, a prototype traction motor driver based SiC for EV is designed and manufactured, and its performance is verified through experiments.

The Development of a Precision BLDC Servo Position Controller for the Composite Smoke Bomb Rotational Driving System (복합연막탄 선회구동장치를 위한 정밀 BLDC 서보 위치 제어기 개발)

  • Koo, Bon-Min;Park, Moo-Yurl;Choi, Jung-Keyung;Choi, Sung-Jin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.951-954
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    • 2005
  • This paper presents a study on the accuracy position Controller design for the Composite Smoke Bomb Rotational driving system using a BLDC servo motor. Function of Smoke Bomb is blind in the enermy's sight so that need to high response. The BLDC servo motor controller was designed with DSP(TMS320VC33), IGBT(Insulated Gate Bipolar. Transistor), IGBT gate driver and CPLD(EPM7128). This paper implements those control with vector control and MIN-MAX PWM. Vector control requires information about rotor positions, a resolver should be used to achieve that. The main controller is implemented with a TMS320VC33 high performance floating-point DSP(Digital Signal Process) and PWM Generator is embodied using EPM7128.

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A Design of LLC Resonant Controller IC in 0.35 um 2P3M BCD Process (0.35 um 2P3M BCD 공정을 이용한 LLC 공진 제어 IC 설계)

  • Cho, Hoo-Hyun;Hong, Seong-Wha;Han, Dae-Hoon;Cheon, Jeong-In;Hur, Jeong;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.5
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    • pp.71-79
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    • 2010
  • This paper presents a design of a LLC resonant controller IC. LLC resonant controller IC controls the voltage of the 2nd side by adjusting frequency the input frequency of the external resonant circuit. The clock generator is integrated to provide the pulse to the resonant circuit and its frequency is controlled by the external resistor. Also, the frequency of the VCO is adjusted by the feedback voltage. The protection circuits such as UVLO(Under Voltage Lock Out), brown out, fault detector are implemented for the reliable and stable operation. The HVG, and LVG drivers can provide the high current and voltage to the IGBT. The designed LLC resonant controller IC is fabricated with the 0.35 um 2P3M BCD process. The overall die size is $1400um{\times}1450um$, and supply voltage is 5V, 15V.