초임계 유체와 공용매를 이용한 미세전자기계시스템 웨이퍼의 식각, 세정을 위한 최적공정조건

Optimum process conditions for supercritical fluid and co-solvents process for the etching, rinsing and drying of MEMS-wafers

This study aims to select suitable co-solvents and to obtain optimal process conditions in order to improve process efficiency and productivity through experimental results obtained under various experimental conditions for the etching and rinsing process using liquid carbon dioxide and supercritical carbon dioxide. Acetone was confirmed to be effective through basic experiments and used as the etching solution for MEMS-wafer etching in this study. In the case of using liquid carbon dioxide as the solvent and acetone as the etching solution, these two components were not mixed well and showed a phase separation. Liquid carbon dioxide in the lower layer interfered with contact between acetone and Mems-wafer during etching, and the results after rinsing and drying were not good. Based on the results obtained under various experimental conditions, the optimum process for treating MEMS-wafer using supercritical CO2 as the solvent, acetone as the etching solution, and methanol as the rinsing solution was set up, and MEMS-wafer without stiction can be obtained by continuous etching, rinsing and drying process. In addition, the amount of the etching solution (acetone) and the cleaning liquid (methanol) compared to the initial experimental values can be greatly reduced through optimization of process conditions.