Clean Technology (청정기술)

The Korean Society of Clean Technology (한국청정기술학회)
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Study of Supercritical Carbon Dioxide/n-Butyl Acetate Co-solvent System with High Selectivity in Photoresist Removal Process

포토레지스트 공정에서 높은 선택성을 가지는 초임계 이산화탄소/n-butyl acetate 공용매 시스템 연구

  • Kim, Dong Woo (Department of Display & Engineering, Pukyong National University) ;
  • Heo, Hoon (Department of Display & Engineering, Pukyong National University) ;
  • Lim, Kwon Teak (Department of Display & Engineering, Pukyong National University)
  • 김동우 (부경대학교 융합디스플레이공학과) ;
  • 허훈 (부경대학교 융합디스플레이공학과) ;
  • 임권택 (부경대학교 융합디스플레이공학과)
  • Received : 2017.06.13
  • Accepted : 2017.08.01
  • Published : 2017.12.31
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Abstract

In this study, the supercritical carbon dioxide ($scCO_2$)/ n-butyl acetate (n-BA) co-solvent system was employed to remove an unexposed negative photoresist (PR) from the surface of a silicon wafer. In addition, the selectivity of the $scCO_2$/n-BA co-solvent system was confirmed for the unexposed and exposed negative PR. Optimum conditions for removal of the unexposed PR were obtained from various conditions such as pressure, temperature and n-BA ratio. The n-BA was highly soluble in $scCO_2$ without cloud point and phase separation in mostly experimental conditions. However, the $scCO_2$/n-BA co-solvent was phase separated at 100 bar, above $80^{\circ}C$. The unexposed and exposed PR was swelled in $scCO_2$ solvent at all experimental conditions. The complete removal of unexposed PR was achieved from the reaction condition of 160 bar, 10 min, $40^{\circ}C$ and 75 wt% n-BA in $scCO_2$, as measured by ellipsometry. The exposed photoresist showed high stability in the $scCO_2$/n-BA co-solvent system, which indicated that the $scCO_2$/n-BA co-solvent system has high selectivity for the PR removal in photo lithograph process. The $scCO_2$/n-BA co-solvent system not only prevent swelling of exposed PR, but also provide efficient and powful performance to removal unexposed PR.

본 연구에서는 초임계 이산화탄소/n-butyl acetate ($scCO_2$/n-BA) 공용매를 사용하여 네거티브형 포토레지스트(PR)를 제거하는 실험을 진행하였다. $scCO_2$와 n-BA의 용해도 평가를 통해 n-BA가 $scCO_2$와 균일하게 섞이는 조건을 실험적으로 측정하였다. 다양한 실험 변수를 조정하여 포토레지스트 제거 실험을 진행하였고, 미노광 포토레지스트 제거에 대한 최적의 조건을 확립하였다. 또한, 노광된 PR과 미노광 PR의 제거율을 비교하여 $scCO_2$/n-BA 공용매의 선택적 제거 성능을 확인하였다. 노광된 PR은 $scCO_2$/n-BA 공용매 환경에서 매우 안정적으로 존재함을 관찰하였고, 미노광 PR은 160 bar, $40^{\circ}C$, 75 wt% n-BA 이상의 농도에서 완전히 제거됨을 확인하였다. $scCO_2$/n-BA 공용매 시스템은 노광 PR과 미노광 PR 사이의 높은 선택성을 제공할 수 있으며, 네거티브 PR의 리소그래피 공정에서 높은 신뢰성을 부여할 것으로 기대된다.

Keywords

References

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