한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제49권5호
  • /
  • Pages.467-471
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  • 2016
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지
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XPS와 SIMS를 이용한 PSG/SiO2/Al-1%Si 적층 박막내의 Na 게터링 분석

Analysis of the Na Gettering in PSG/SiO2/Al-1%Si Multilevel Thin Films using XPS and SIMS

  • 김진영 (광운대학교 전자재료공학과)
  • Kim, Jin Young (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2016.09.19
  • 심사 : 2016.10.14
  • 발행 : 2016.10.31
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초록

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

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참고문헌

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