참고문헌
- H. Shang, M. Frank, E. Gusev, J. Chu, S. Bedell, K. Guarini and M. Jeong, IBM J. Res. Dev., 50, 377 (2006). https://doi.org/10.1147/rd.504.0377
- A. Dimoulas, P. Tsipas, A. Sotiropoulos and E. Evangelou, Appl. Phys. Lett., 89, 252110 (2006). https://doi.org/10.1063/1.2410241
- D. Kuzum, K. Martens, T. Krishnamohan and K. Saraswat, Appl. Phys. Lett., 95, 252101 (2009). https://doi.org/10.1063/1.3270529
- T. Nishimura, K. Kita and A. Toriumi, Appl. Phys. Lett., 91, 123123 (2007). https://doi.org/10.1063/1.2789701
- Y. Zhou, M. Ogawa, M. Bao, W. Han, R. Kawakami and K. Wang, Appl. Phys. Lett., 94, 242104 (2009). https://doi.org/10.1063/1.3157128
- T. Nishimura, K. Kita and A. Toriumi, Appl. Phys. Exp., 1, 051406 (2008). https://doi.org/10.1143/APEX.1.051406
- B. Tsui and M. Kao, Appl. Phys. Lett., 103, 032104 (2013). https://doi.org/10.1063/1.4813834
- F. Auret, W. Meyer, S. Coelho and M. Hayes, Appl. Phys. Lett., 88, 242110 (2006). https://doi.org/10.1063/1.2213203
- E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. Meirhaeghe and P. Clauws, J. Electrochem. Soc., 154, H857 (2007). https://doi.org/10.1149/1.2759832
- S. Coelho, F. Auret, P. Rensburg and J. Nel, J. Appl. Phys., 114, 173708 (2013). https://doi.org/10.1063/1.4828999
- F. Auret, S. Coelho, P. Rensburg, C. Nyamhere and W. Meyer, Mater. Sci. Semicond. Process., 11, 348 (2008). https://doi.org/10.1016/j.mssp.2008.09.001
- H. Michaelson, J. Appl. Phys., 48, 4729 (1977). https://doi.org/10.1063/1.323539
- S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., Wiley, New York (1981).
- J. Sullivan, R. Tung, M. Pinto and W. Graham, J. Appl. Phys., 70, 7403 (1991). https://doi.org/10.1063/1.349737
- S. Cheung and N. Cheung, Appl. Phys. Lett., 49, 85 (1986). https://doi.org/10.1063/1.97359
- S. Witczak, J. Suehle and M. Gaitan, Solid State Electron., 35, 345 (1992). https://doi.org/10.1016/0038-1101(92)90238-8
- P. Chattopadhyay and B. Raychaudhuri, Solid State Electron., 36, 605 (1993). https://doi.org/10.1016/0038-1101(93)90272-R
- M. Green and J. Shewchun, Solid State Electron., 16, 1141 (1973). https://doi.org/10.1016/0038-1101(73)90141-X
- W. Monch, J. Vac. Sci. Technol. B, 17, 1867 (1999). https://doi.org/10.1116/1.590839
- A. Chawanda, J. Nel, F. Auret, W. Mtangi, C. Nyamhere, M. Diale and L. Leach, J. Korean Phys. Soc., 57, 1970 (2010). https://doi.org/10.3938/jkps.57.1970
- H. Yao, D. Chi, R. Li, S. Lee and D. Kwong, Appl. Phys. Lett., 89, 242117 (2006). https://doi.org/10.1063/1.2408665
- F. Auret, S. Coelho, W. Meyer, C. Nyamhere, M. Hayes and J. Nel, J. Electron. Mater., 36, 1604 (2007). https://doi.org/10.1007/s11664-007-0245-y
- S. Chattopadhyay, K. Bera, K. Ray, K. Bose, D. Dentel and L. Kubler, J. Mat. Sci. Mater. Electron., 9, 403 (1998).
- M. Mamor, J. Phys. Condens. Matter., 21, 335802 (2009). https://doi.org/10.1088/0953-8984/21/33/335802
- S. Sun, Y. Sun, Z. Liu, D. Lee, S. Peterson and P. Pianetta, Appl. Phys. Lett., 88, 021903 (2006). https://doi.org/10.1063/1.2162699
- X. Li, A. Li, X. Liu, Y. Gong, X. Chen, H. Li and D. Wu, Appl. Surf. Sci., 257, 4589 (2011). https://doi.org/10.1016/j.apsusc.2010.12.072
- B. Xue, H. Chang, B. Sun, S. Wang and H. Liu, Chin. Phys. Lett., 29, 046801 (2012). https://doi.org/10.1088/0256-307X/29/4/046801