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Effect of Electron Irradiation on the Electrical and Optical Properties of SnO2 Thin Films

전자빔 표면조사에 따른 SnO2 박막의 전기적, 광학적 특성 연구

  • Song, Young-Hwan (School of Materials Science and Engineering, University of Ulsan) ;
  • Moon, Hyun-Joo (School of Materials Science and Engineering, University of Ulsan) ;
  • Kim, Daeil (School of Materials Science and Engineering, University of Ulsan)
  • 송영환 (울산대학교 첨단소재공학부) ;
  • 문현주 (울산대학교 첨단소재공학부) ;
  • 김대일 (울산대학교 첨단소재공학부)
  • Received : 2016.03.10
  • Accepted : 2016.03.24
  • Published : 2016.06.30

Abstract

We have considered the influence of electron irradiation on the optical and electrical properties of $SnO_2$ thin films deposited with reactive RF magnetron sputtering. After deposition, the films electron irradiated at 300 eV shows a lower sheet resistance of $277{\Omega}/{\square}$ and the optical transmittance in a visible wave length region also influenced with the electron irradiation energy. The film that electron irradiated at 400 eV shows a higher optical transmittance of 82.6% in this study. By comparison of figure of merit, it is concluded that the post-deposition electron irradiation at 300 eV is the optimum condition for the enhancement of opto-electrcal performance of $SnO_2$ thin film in this study.

Keywords

References

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