JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Atomic Layer Deposition of TiO2 using Titanium Isopropoxide and H2O: Operational Principle of Equipment and Parameter Setting

  • Cho, Karam (School of Electrical and Computer Engineering, University of Seoul) ;
  • Park, Jung-Dong (Division of Electronics and Electrical Engineering, Dongguk University) ;
  • Shin, Changhwan (School of Electrical and Computer Engineering, University of Seoul)
  • Received : 2015.11.25
  • Accepted : 2016.01.05
  • Published : 2016.06.30
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Abstract

Titanium dioxide ($TiO_2$) films are deposited by atomic layer deposition (ALD) using titanium isopropoxide (TTIP) and $H_2O$ as precursors. The operating instructions for the ALD equipment are described in detail, along with the settings for relevant parameters. The thickness of the $TiO_2$ film is measured, and thereby, the deposition rate is quantitatively estimated to verify the linearity of the deposition rate.

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References

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