반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

XRD의 결정구조로 살펴본 GZO 박막의 온도의존성

Temperature Dependence of Bonding Structure of GZO Thin Film Analyzed by X-ray Diffractometer

  • Oh, Teresa (Division of Semiconductor, Choengju University)
  • 투고 : 2016.03.02
  • 심사 : 2016.03.23
  • 발행 : 2016.03.31
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초록

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

키워드

참고문헌

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