반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Si 선택적 성장을 위한 대형 CVD 반응기 내의 열 및 유동해석

Analysis on the Flow and Heat Transfer in a Large Scale CVD Reactor for Si Epitaxial Growth

  • 장연호 (전북대학교 대학원 기계설계공학과) ;
  • 고동국 (전북대학교 기계설계공학부) ;
  • 임익태 (전북대학교 기계설계공학부)
  • Jang, Yeon-Ho (Dept. of Mechanical Design Eng., Graduate School, Chonbuk National University) ;
  • Ko, Dong Guk (Dept. of Mechanical Design Eng., Chonbuk National University) ;
  • Im, Ik-Tae (Dept. of Mechanical Design Eng., Chonbuk National University)
  • 투고 : 2016.02.24
  • 심사 : 2016.03.23
  • 발행 : 2016.03.31
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초록

In this study, gas flow and temperature distribution in the multi-wafer planetary CVD reactor for the Si epitaxial growth were analyzed. Although the structure of the reactor was simplified as the first step of the study, the three-dimensional analysis was performed taking all these considerations of the revolution of the susceptor and the rotation of satellites into account. From the analyses, a reasonable velocity field and temperature field were obtained. However, it was found that analyses including the upper structure of the reactor were required in order to obtain more realistic temperature results. DCS mole fraction above the satellite surface and the susceptor surface without satellite was compared in order to check the gas species mixing. We found that satellite rotation helped gases to mix in the reactor.

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참고문헌

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