Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Study on Properties of Ga-doped ZnO Thin Films for Annealing Temperature Change by RF Sputtering Method

RF Sputtering으로 증착한 어닐링 온도 변화에 따른 Ga-doped ZnO 박막 특성 연구

  • Han, Seung Ik (Department of Semiconductor Engineering, Cheong ju University) ;
  • Kim, Hong Bae (Department of Semiconductor Engineering, Cheong ju University)
  • 한승익 (청주대학교 반도체공학과) ;
  • 김홍배 (청주대학교 반도체공학과)
  • Received : 2016.05.18
  • Accepted : 2016.06.10
  • Published : 2016.06.30
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Abstract

This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.

Keywords

References

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