반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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증착 온도 및 수소 유량에 따른 IGZO 박막의 구조적 및 전기적 특성

Structural and Electrical Characteristics of IGZO Thin Films Deposited at Different Substrate Temperature and Hydrogen Flow Rate

  • 박수진 (한국기술교육대학교 에너지신소재화학공학부) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부)
  • Park, Su Jin (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 투고 : 2016.11.22
  • 심사 : 2016.12.26
  • 발행 : 2016.12.31
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초록

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 1.0sccm. IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.

키워드

참고문헌

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