IGZO박막 증착 공정에서 플라즈마 방출광 모니터링 및 플라즈마 균일도 제어

Monitoring and Controlling Uniformity of Plasma Emission Intensity for IGZO Sputtering Process

  • 투고 : 2016.11.02
  • 심사 : 2016.12.26
  • 발행 : 2016.12.31

초록

In recent years, various researches have been conducted to improve process yields in accordance with miniaturization of semiconductor. APC(Advanced Process Control) is considered one of the methods to increase in process yields. APC is a process control technology that maintains optimal process conditions and improves the reliability of results by controlling and formulating the relationship among the various process parameters and results. We built up an optical diagnostic system with a three-channel spectrometer. The system detects signals those represent the changes of specific emission peaks intensity versus each reference and converts it into MFC control signals to get back the changes to the reference state. Controlling the MFC continues until the specific peak intensity changes into the normal state. Through this device, we tested a APC automatically responding to process changes during the plasma process. We could control gas flow while sputtering process on going and improve uniformity of plasma intensity with this system. Finally, we have got results those enhance the plasma intensity non-uniformity to 7.7% from 15.5%. Also, found unexpected oxygen flow what is estimated to be come out from IGZO target.

키워드

참고문헌

  1. Nomura, Kenji. et al., "Room-temperature fabrication of transparent flexible thin film transistors using amorphous oxide semiconductors," Nature, Vol. 520, pp. 488-492, 2004.
  2. Jang, Kyungsoo., et al., "A Review : Improve of Operation for Realizing of High Mobility Oxide Semiconductor Thin-film Transistors," J. Korean Inst. Electr. Electron. Mater. Eng., Vol. 28, pp. 351-360, 2015.
  3. Ide, Keisuke. et al., "Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors," Thin Solid Films, Vol. 520, pp. 3787-3790, 2012. https://doi.org/10.1016/j.tsf.2011.10.062
  4. Shin, Hyun Soo. et al., "Annealing temperature dependence on the positive bias stability of IGZO thinfilm transistors," Journal of Information Display, Vol. 12, pp. 209-212, 2011. https://doi.org/10.1080/15980316.2011.621331
  5. Lee, Yih-Shing. et al., "Relationships between the crystalline phase of an IGZO target and electrical properties of a-IGZO channel film," Ceramics International, Vol.38, pp. s595-s599, 2012. https://doi.org/10.1016/j.ceramint.2011.05.105
  6. Kim, Taeyong. et al., "A Review : Improvement of Electrical Performance in the Oxide Semiconductor Thin Film Transistor Using Various Treatment," J. Korean Inst. Electr. Electron. Mater. Eng.", Vol. 29, pp. 1-5, 2016.
  7. Subramanyam, Guru. et al., "Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components," Journal of Applied Physics, Vol. 114, pp. 192301, 2013.
  8. J. I. Jeong, J. H. Yang and S. M. Cho, "Characteristics of Cu Films Deposited by High Rate Magnetron Sputtering Source," RIST Journal of R&D, Vol. 22, pp. 119-125, 2008.
  9. Hong, Sang Jeen. et al., "Optical In-Situ Plasma Process Monitoring Technique for Detection of Abnormal Plasma Discharge," Transactions on Electrical and Electronic Materials, Vol. 14, pp. 71-77, 2013. https://doi.org/10.4313/TEEM.2013.14.2.71
  10. A. Kolpakova, P. Kudrna, and M. Tichy, "Study of Plasma System by OES (Optical Emission Spectroscopy," WDS'11 Proceedings of Contributed Papers, Part II, pp. 180-185, 2011.
  11. Kim, Hyun Hoo., and others. Introduction to BASIC VACUUM ENGINEERUNG for Semiconductor and Display Processing. Seoul: NAEHA CORP. 2007.
  12. Kal Renganathan Sharma, PE. PRINCIPLES OF MASS TRANSPER. New Delhi: Prentice-Hall of India Private ltd. 2007.