JSTS:Journal of Semiconductor Technology and Science

  • 제16권2호
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  • Pages.166-171
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  • 2016
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Edge Cut Process for Reducing Ni Content at Channel Edge Region in Metal Induced Lateral Crystallization Poly-Si TFTs

  • SEOK, Ki Hwan (Department of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyung Yoon (Department of Materials Science and Engineering, Seoul National University) ;
  • Park, Jae Hyo (Department of Materials Science and Engineering, Seoul National University) ;
  • Lee, Sol Kyu (Department of Materials Science and Engineering, Seoul National University) ;
  • Lee, Yong Hee (Department of Materials Science and Engineering, Seoul National University) ;
  • Joo, Seung Ki (Department of Materials Science and Engineering, Seoul National University)
  • 투고 : 2015.08.24
  • 심사 : 2015.11.04
  • 발행 : 2016.04.30
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초록

Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.

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참고문헌

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