The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Study on the SPICE Model Parameter Extraction Method for the Schottky Diode Under DC Forward Bias

DC 순방향 바이어스 인가조건에서 Schottky 다이오드의 SPICE 모델 파라미터 추출 방법에 관한 연구

  • Lee, Un-Gu (Dept. Information & Communication Bucheon Univ.)
  • Received : 2016.01.06
  • Accepted : 2016.02.24
  • Published : 2016.03.01
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Abstract

The method for extracting the SPICE model parameter of Schottky diode under DC forward bias is proposed. A method for improving the accuracy of the SPICE model parameter at various temperatures is proposed. Three analysis steps according to the magnitude of the current is used in order to extract the parameters effectively. At each analysis step, initial parameters are calculated by using the current-voltage equations and the Levenberg-Marquardt analysis is proceeded. To verify the validity of the proposed method, the SPICE model parameters for the BAT45 and FSV1045 under DC forward bias is extracted. Schottky diode currents obtained from the proposed method shows the average relative error of 6.1% and 9% compared with the measured data for the BAT45 and FSV1045 sample at various temperatures.

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References

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