The Journal of Korean Institute of Electromagnetic Engineering and Science (한국전자파학회논문지)

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
권호 표지
DOI QR코드

DOI QR Code

A High Linearity Low Noise Amplifier Using Modified Cascode Structure

높은 선형성을 갖는 새로운 구조의 MMIC 저잡음 증폭기

  • Park, Seung Pyo (Electrical and Computer Engineering, University of Seoul) ;
  • Eu, Kyoung Jun (Electrical and Computer Engineering, University of Seoul) ;
  • No, Seung Chang (Electrical and Computer Engineering, University of Seoul) ;
  • Lee, Moon-Que (Electrical and Computer Engineering, University of Seoul)
  • 박승표 (서울시립대학교 전자전기컴퓨터공학과) ;
  • 어경준 (서울시립대학교 전자전기컴퓨터공학과) ;
  • 노승창 (서울시립대학교 전자전기컴퓨터공학과) ;
  • 이문규 (서울시립대학교 전자전기컴퓨터공학과)
  • Received : 2015.11.11
  • Accepted : 2016.01.27
  • Published : 2016.02.29
Download PDF
⟨ Previous Next ⟩

Abstract

This letter proposes a low noise amplifier which has low noise figure and high linearity simultaneously using a cascode structure with an additional transistor. The proposed structure minimizes the noise source by using optimizing transistor sizes and also improves linearity from the current bleeding technique. The device was fabricated in a $0.5{\mu}m$ GaAs pHEMT process and has noise figure of 1.1 dB, a voltage gain of 15.0 dB, an $OIP_3$ of 30.8 dBm and an input/output return loss of 11.6 dB/10.4 dB from 1.8 to 2.6 GHz.

본 논문에서는 캐스코드(cascode) 구조에 트랜지스터를 추가하여 잡음 특성을 유지하면서 높은 선형성을 갖는 저잡음 증폭기 구조를 제안하고 설계하였다. 제안한 구조는 트랜지스터의 사이즈 최적화를 통해 잡음원을 최소화 했으며, 전류원분리(current bleeding) 효과를 주어 선형성을 개선하였다. 저잡음 특성에 유리한 $0.5{\mu}m$ pHEMT 공정을 이용해 제작된 저잡음 증폭기는 1.8~2.6 GHz의 동작 대역에서 30.8 dBm의 $OIP_3$, 15.0 dB의 이득, 1.1 dB의 NF, 11.6 dB/10.4 dB의 입출력 반사 손실 특성을 보였다.

Keywords

References

  1. B. Kim, J. Ko, and K. Lee, "A new linearization technique for MOSFET RF amplifier using multiple gated transistor", IEEE Microwave Guided Wave Lett., vol. 10, no. 9, pp. 371-373, 2000. https://doi.org/10.1109/75.867854
  2. Jingshi Yao, Xiaopeng Sun, and B. Line, "Ultra low-noise highly linear integrated 1.5 to 2.7 GHz LNA", IEEE Intern. Wireless Symp. pp. 1-4, 2014.
  3. T. K. Nguyen, Y. M. Su, and S. G. Lee, "A power constrained simultaneous noise and input matched low noise amplifier design technique", in Proc Intern. Symp. on Circuits and Systems, vol. 4, pp. 23-26, May 2004.
  4. B. Prameela, K. P. Jagadeesh, "Design of a MESFET based low noise amplifier with improved noise figure for low power wireless applications in 2-3 GHz", IEEE Intern Conf. on Advances in Computing and Communications. pp. 257-260, 2013.
  5. A. Fazal, H. Craig, and P. Allen "A novel cascode feed-back GaAs MMIC LNA with transformer-coupled output using multiple fabrication processes", IEEE Microwave Guided Wave Lett. vol. 2, no. 2, pp. 70-72, Feb. 1992. https://doi.org/10.1109/75.122414
  6. S. Kumar, W. Lam, "Enhancement mode GaAs pHEMT LNA with linearity control and phased matched mitigated bypass switch and differential active mixer", IEEE MTTS Digest, vol. 3, pp. 1577-1580, 2003.
  7. S. Ock, B. Kim, "A modified cascode type low noise amplifier using dual common source transistors", IEEE MTT-S Digest, vol. 3, pp. 1423-1426, 2002.