Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Formation of Metal Electrode on Si3N4 Substrate by Electrochemical Technique

전기화학 공정을 이용한 질화규소 기판 상의 금속 전극 형성에 관한 연구

  • Shin, Sung-Chul (Surface Technology Division Korea, Institute of Materials Science) ;
  • Kim, Ji-Won (Surface Technology Division Korea, Institute of Materials Science) ;
  • Kwon, Se-Hun (Dept. of Materials Science & Engineering, Pusan National University) ;
  • Lim, Jae-Hong (Surface Technology Division Korea, Institute of Materials Science)
  • 신성철 (한국기계연구원 부설 재료연구소(KIMS) 표면기술본부) ;
  • 김지원 (한국기계연구원 부설 재료연구소(KIMS) 표면기술본부) ;
  • 권세훈 (부산대학교 재료공학과) ;
  • 임재홍 (한국기계연구원 부설 재료연구소(KIMS) 표면기술본부)
  • Received : 2016.11.04
  • Accepted : 2016.12.02
  • Published : 2016.12.31
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Abstract

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

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