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A Study of Optimum Growth Rate on Large Scale Ingot CCz (Continuous Czochralski) Growth Process for Increasing a Productivity

생산성 증대를 위한 대구경 잉곳 연속 성장 초크랄스키 공정 최적 속도 연구

  • Lee, Yu-Ri (Department of Chemical Engineering, Yeungnam University) ;
  • Roh, Ji-Won (Department of Chemical Engineering, Yeungnam University) ;
  • Jung, Jae Hak (Department of Chemical Engineering, Yeungnam University)
  • 이유리 (영남대학교 화학공학부) ;
  • 노지원 (영남대학교 화학공학부) ;
  • 정재학 (영남대학교 화학공학부)
  • Received : 2016.07.19
  • Accepted : 2016.08.24
  • Published : 2016.12.01

Abstract

Recently, photovoltaic industry needs a new design of Czochralski (Cz) process for higher productivity with reasonable energy consumption as well as solar cell's efficiency. If the process uses the large size reactor for increasing productivity, it is possible to produce a 12-inch, rather than the 8-inch. Also the continuous czochralski process method can be maximized to increase productivity. In this study, it was designed to improve the yield value of ingot with optimal condition which reduce consumption of electrical power. It has increased the productivity of the 12-inch ingot process condition by using CFD simulation. I have found optimal growth rate, by comparing each growth rate the interface shape, Temperature gradient, power consumption. As a result, the optimal process parameters of the growth furnace has been derived to improve for the productivity and to reduce energy. This study will contribute to the improvement of the productivity in the solar cell industry.

최근 태양전지 산업에서는 효율과 더불어서 생산성을 높이고 원가를 절감할 수 있는 설계가 요구되고 있다. 생산성의 향상을 위하여 반응기의 크기를 키우면 기존의 8 inch 잉곳에서 12 inch 잉곳으로 생산이 가능하다. 또한 연속공정법을 사용하여 생산성 증대를 극대화 시킬 수 있다. 본 연구에서는 12인치 잉곳이 최적 컨디션의 수율향상을 위한 소비전력 감소와 생산성 향상에 관한 시뮬레이션을 진행하였다. 인출속도 별 계면 형상과 폰-미제스 스트레스, 온도구배, 소비전력을 비교하여 최적의 인출속도를 찾았다. 그 결과, 생산성 향상과 에너지를 절감할 수 있는 최적 공정 파라미터를 도출할 수 있었다. 이러한 연구는 실제 태양전지 산업에서 생산성 향상에 기여할 수 있을 것으로 기대 된다.

Keywords

References

  1. Sinno, T. et al., "Defect engineering of Czochralski single-crystal silicon," Mater. Sci. Eng. Reports, 28(5-6), 149-198(2000). https://doi.org/10.1016/S0927-796X(00)00015-2
  2. Tomzig, E. et al., "Challenges for Economical Growth of High Quality 300 mm CZ Si Crystals," Microelectron. Eng., 45(2), 113-125(1999). https://doi.org/10.1016/S0167-9317(99)00109-4
  3. Dunham, S. T. and Nelson, J. S., "Semiconductor Process and Device Performance Modeling," Mater. Res. Soc. Symp. Proc., 490, 181(1998).
  4. Lee, J. S. and Kim, K. H., "Solar Cell Engineering," Book Publication GREEN(2007).
  5. University of Incheon, "Development of defect controlling methods in Si single crystals," Report(1995).
  6. Jeong, H. B., "Numerical Study on a Single Crystal Growth using a Czochralski Method," Inha University Graduate School, Master's Thesis(2008).
  7. Lee, S.-H. et al., "A Cold Model Experiment on the Thermal Convection in the Czochralski Silicon Single Crystal Growth Process," J. of Korean Association of Crystal Growth, 9(2), 149-156(1999).
  8. Kalaev, V. V. et al. "Calculation of Bulk Defects in CZ Si Growth: Impact of Melt Turbulent Fluctuations," J. Cryst. Growth, 250(1-2), 203-208(2003). https://doi.org/10.1016/S0022-0248(02)02240-6
  9. N. Van den Bogaert and Dupret, F., "Dynamic Global Simulation of the Czochralski Process II. Analysis of the Growth of a Germanium Crystal," J. Cryst. Growth, 171(1-2), 77-93(1997). https://doi.org/10.1016/S0022-0248(96)00489-7
  10. Jeong, H. B., "Numerical Study on Effect of Crucible and Crystal Rotation on Flow Field in Czochralski Growth Process," The Korean Institute of Metals and Materials, 1, 184(2007).
  11. Lee, E. K., "Optimal Design of Cz Process for Increasing a Productivity of Single Crystal Si Solar Cell Ingot," Korean Chemical Engineering Research, 49(4), 432-437(2011). https://doi.org/10.9713/kcer.2011.49.4.432
  12. Jung, Y. J., "Study of Oxygen Concentration and Interface Optimization in Czochralski Process for Production of Low-Cost, High-Quality Ingot," Yeungnam University Graduate School, Master's Thesis(2014).
  13. Jeon, B. C., "Optimal design for maximizing ingot production rate in large diameter continuous CZ process," Yeungnam University Graduate School, Master's Thesis(2015).

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