JSTS:Journal of Semiconductor Technology and Science

  • 제16권1호
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  • Pages.106-111
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  • 2016
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Modeling of Electrolyte Thermal Noise in Electrolyte-Oxide-Semiconductor Field-Effect Transistors

  • Park, Chan Hyeong (Department of Electronics and Communications Engineering, Kwangwoon University) ;
  • Chung, In-Young (Department of Electronics and Communications Engineering, Kwangwoon University)
  • 투고 : 2015.09.03
  • 심사 : 2015.11.27
  • 발행 : 2016.02.28
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초록

Thermal noise generated in the electrolyte is modeled for the electrolyte-oxide-semiconductor field-effect transistors. Two noise sources contribute to output noise currents. One is the thermal noise generated in the bulk electrolyte region, and the other is the thermal noise from the double-layer region at the electrolyte-oxide interface. By employing two slightly-different equivalent circuits for two noise current sources, the power spectral density of output noise current is calculated. From the modeling and simulated results, the bulk electrolyte thermal noise dominates the double-layer thermal noise. Electrolyte thermal noise are computed for three different concentrations of NaCl electrolyte. The derived formulas give a good agreement with the published experimental data.

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