JSTS:Journal of Semiconductor Technology and Science

  • 제16권1호
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  • Pages.39-43
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  • 2016
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Enhanced Efficiency of Transmit and Receive Module with Ga Doped MgZnO Semiconductor Device by Growth Thickness

  • Shim, Bo-Hyun (Daegu Center, Defense Agency for Technology and Quality) ;
  • Jo, Hee-Jin (Department of Analysis Assessment, Defense Agency for Technology and Quality) ;
  • Kim, Dong-Jin (Daegu Center, Defense Agency for Technology and Quality) ;
  • Chae, Jong-Mok (Daegu Center, Defense Agency for Technology and Quality)
  • 투고 : 2015.05.21
  • 심사 : 2016.01.09
  • 발행 : 2016.02.28
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초록

The structural, electrical properties of Ga doped MgZnO transparent conductive oxide (TCO) films by ratio-frequency(RF) magnetron sputtering were investigated. Ga doped MgZnO TCO films were deposited on the sapphire substrates at $200^{\circ}C$ varying growth thickness 200 to 600 nm. The optical properties of Ga doped MgZnO TCO films were showed above 85% transmittance from 300 to 1000 nm region. In addition, the current density ($J_{SC}$) of $Cu(In,Ga)Se_2$ (CIGS) solar cells was improved by using the MgZnO:Ga films of 500 nm thickness because of outstanding electrical properties. The $Cu(In,Ga)Se_2$ solar cells with MgZnO:Ga transparent conducing layer yielded an efficiency of 9.8% with current density ($31.8mA/cm^2$), open circuit voltage (540.2 V) and fill factor (62.2) under AM 1.5 illumination.

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참고문헌

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