한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제29권2호
  • /
  • Pages.120-124
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  • 2016
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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투명 유연 a-IGZO 박막트랜지스터의 제작 및 전기적 특성

Fabrication and Electrical Characteristics of Transparent and Bendable a-IGZO Thin-film Transistors

  • 박석형 (고려대학교 전기전자공학과) ;
  • 조경아 (고려대학교 전기전자공학과) ;
  • 오현곤 (고려대학교 전기전자공학과) ;
  • 김상식 (고려대학교 전기전자공학과)
  • Park, Sukhyung (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyoungah (Department of Electrical Engineering, Korea University) ;
  • Oh, Hyungon (Department of Electrical Engineering, Korea University) ;
  • Kim, Sangsig (Department of Electrical Engineering, Korea University)
  • 투고 : 2015.12.11
  • 심사 : 2016.01.20
  • 발행 : 2016.02.01
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초록

In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an $I_{on}/I_{off}$ ratio of $1.8{\times}10^8$, a field effect mobility of $15.4cm^2/V{\cdot}s$, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.

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참고문헌

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