References
- B.J. Baliga, "Advanced Power MOSFET Concepts," NY, USA: Springer-Science, 2010, pp. 265-354.
- Y.H. Lho et al., "Design of Non-uniform 100-V Super-Junction Trench Power MOSFET with Low On-Resistance," IEICE Electron. Exp., vol. 9, no. 13, July 2012, pp. 1109-1114. https://doi.org/10.1587/elex.9.1109
- B.J. Baliga, "Fundamentals of Power Semiconductor Devices," NY, USA: Springer-Science, 2008, pp. 279-286.
- D.L. Blackburn, "Temperature Measurements of Semiconductor Devices," IEEE SEMI-THERM Symp., Mar 9-11, 2004, pp. 70-80.
- H. Kock et al., "Design of a Test Chip with Small Embedded Temperature Sensor Structures Realized in a Common-Drain Power Trench Technology," IEEE Int. Conf. Microelectronic Test Structure, Amsterdam, Netherlands, Apr. 4-7, 2011, pp. 176-181.
- SILVACO TCAD Manual, Atlas, 2011.
- H. Dia et al., "A Temperature-Dependent Power MOSFET Model for Switching Application," Int. Workshop Thermal Investigation ICs Syst., Oct. 7-9, 2009, pp. 87-90.
- S. de Filippis et al., "ANSYS Based 3D Electro-Thermal Simulations for the Evaluation of Power MOSFETs Robustness," Microelectronics Rel., vol. 51, 2011, pp. 1954-1958. https://doi.org/10.1016/j.microrel.2011.06.047
- M. Pfost and J. Joos, "Measurement and Simulation of Self-Heating in DMOS Transistors up to Very High Temperatures," Int. Symp. Power Semicond. Devices ICs, Orlando, FL, USA, May 18-22, 2008, pp. 209-212.
- V. Kosel et al., "Non-linear Thermal Modeling of DMOS Transistor and Validation Using Electrical Measurements and FEM Simulations," Microelectronics J., vol. 41, no. 12, Dec. 2010, pp. 889-896. https://doi.org/10.1016/j.mejo.2010.07.016
- M. Lofti and D. Zohir, "The Electro-Thermal Sub-circuit Model for Power MOSFETs," Microelectronics Solid State Electron., vol. 1, no. 2, 2012, pp. 26-32.
- A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options, Fairchild Semicond., Appl., Note AN-7510, Oct. 2003.
- E. Marcault et al., "Distributed Electrothermal Modeling Methodology for MOS Gated Power Devices Simulations," Int. Conf. Mixed Des. Integr. Circuits Syst., Gdynia, Poland, June 20-22, 2013, pp. 301-305.
- J.B. Sauveplane et al., "3D Electro-Thermal Investigations for Reliability of Ultra-Low ON State Resistance Power MOSFET," Microelectronics Rel., vol. 48, 2008, pp. 1464-1467. https://doi.org/10.1016/j.microrel.2008.06.022
- LTspice IV, Linear Technology Corporation, 2014.
- ANSYS Fluent User's Guide Release 14.0, Nov. 2011.
- J.B. Sauveplane et al., "Smart 3-D Finite-Element Modeling for the Design of Ultra-Low On-Resistance MOSFET," IEEE Trans. Adv. Packag., vol. 30, no. 4, Nov. 2007, pp. 789-794. https://doi.org/10.1109/TADVP.2007.906238
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