한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제28권9호
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  • Pages.551-554
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  • 2015
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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3,000 V급 초접합 필드링을 갖는 초접합 IGBT 제작에 관한 연구

The Fabrication of Super Junction IGBT with 3,000 V Class Super Junction Field Rings

  • Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
  • 투고 : 2015.08.08
  • 심사 : 2015.08.24
  • 발행 : 2015.09.01
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초록

This paper was analyzed electrical characteristics of super junction IGBT with super junction field rings. As a result of super junction IGBT with super junction field rings, we obtained 3,300 V breakdown voltage and good thermal characteristics. we obtained shrinked chip size because field ring was decreased than field ring for conventional IGBT, too. And we fabricated super junction IGBT with super junction field rings. As a result of measuring fabricated chip, we obtained 3,300 V breakdown voltage. The fabricated devices were replaced thyristos using high voltage conversion, sufficiently.

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참고문헌

  1. MOSFET Basics - Fairchild Semiconductor, 2000
  2. G. P. Sim, B. S. Ann, Y. H. Kang, Y. S. Hong, and E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 190 (2013)
  3. H. S. Lee, E. G. Kang, A. Shin, H. H. Shin, and M. Y. Sung, KIEE, 7 (2006).
  4. Y. S. Hang, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 276 (2012).
  5. J. H. Lee, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 270 (2012).

피인용 문헌

  1. Characterization and Performance Evaluation of the Superjunction RB-IGBT in Matrix Converter vol.33, pp.4, 2018, https://doi.org/10.1109/TPEL.2017.2709323