JSTS:Journal of Semiconductor Technology and Science

  • 제15권3호
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  • Pages.356-364
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  • 2015
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Study on the Thermal Transient Response of TSV Considering the Effect of Electronic-Thermal Coupling

  • Li, Chunquan (School of Electrical Engineering and Automation, Guilin University of Electronic Technology) ;
  • Zou, Meng-Qiang (School of Electrical Engineering and Automation, Guilin University of Electronic Technology) ;
  • Shang, Yuling (School of Electrical Engineering and Automation, Guilin University of Electronic Technology) ;
  • Zhang, Ming (School of Electrical Engineering and Automation, Guilin University of Electronic Technology)
  • 투고 : 2014.12.09
  • 심사 : 2015.05.29
  • 발행 : 2015.06.30
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초록

The transmission performance of TSV considering the effect of electronic-thermal coupling is an new challenge in three dimension integrated circuit. This paper presents the thermal equivalent circuit (TEC) model of the TSV, and discussed the thermal equivalent parameters for TSV. Si layer is equivalent to transmission line according to its thermal characteristic. Thermal transient response (TTR) of TSV considering electronic-thermal coupling effects are proposed, iteration flow electronic-thermal coupling for TSV is analyzed. Furthermore, the influences of TTR are investigated with the non-coupling and considering coupling for TSV. Finally, the relationship among temperature, thickness of $SiO_2$, radius of via and frequency of excitation source are addressed, which are verified by the simulation.

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참고문헌

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