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Effect of KF Treatment of Cu(In,Ga)Se2 Thin Films on the Photovoltaic Properties of CIGS Solar Cells

Cu(In,Ga)Se2 박막의 KF 처리가 CIGS태양전지에 미치는 영향

  • Jeong, Gwang Sun (Department of Materials Science and Engineering, Korea advanced Institute of Science and Technology) ;
  • Cha, Eun Seok (Department of Materials Science and Engineering, Korea advanced Institute of Science and Technology) ;
  • Moon, Sun Hong (Department of Materials Science and Engineering, Korea advanced Institute of Science and Technology) ;
  • Ahn, Byung Tae (Department of Materials Science and Engineering, Korea advanced Institute of Science and Technology)
  • 정광선 (한국과학기술원 신소재공학과) ;
  • 차은석 (한국과학기술원 신소재공학과) ;
  • 문선홍 (한국과학기술원 신소재공학과) ;
  • 안병태 (한국과학기술원 신소재공학과)
  • Received : 2015.05.06
  • Accepted : 2015.06.06
  • Published : 2015.06.30

Abstract

We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and $300^{\circ}C$. No fine particle was detected at 500 and $250^{\circ}C$. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.

Keywords

References

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