Current Photovoltaic Research

  • 제3권1호
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  • Pages.21-26
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  • 2015
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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Cu(In,Ga)Se2 박막의 저온 성장 및 NaF 후속처리를 통한 태양전지 셀 특성 연구

Low-temperature Growth of Cu(In,Ga)Se2 Thin Film and NaF Post Deposition Treatment for Cu(In,Ga)Se2 Solar Cells

  • 김승태 (한국과학기술원 신소재공학과) ;
  • 정광선 (한국과학기술원 신소재공학과) ;
  • 윤재호 (한국에너지기술연구원 태양광발전팀) ;
  • 박병국 (한국과학기술원 신소재공학과) ;
  • 안병태 (한국과학기술원 신소재공학과)
  • Kim, Seung Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Jung, Gwang Seon (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Yun, Jae Ho (Photovoltaics Team, Korea Institute of Energy Research) ;
  • Park, Byong Guk (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Byung Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 투고 : 2015.02.23
  • 심사 : 2015.03.03
  • 발행 : 2015.03.31
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초록

High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.

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참고문헌

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