• Current Photovoltaic Research
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• 제3권1호
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• pp.21-26
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• 2015

High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.