Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Appropriate Flux Generating Conditions for Semiconductor Etching Simulation

반도체 식각 전산모사에 적합한 플럭스 생성 조건

  • Jeong, Seunghan (Division of Electronics & Information Engineering, Chonbuk National University) ;
  • Gwun, Oubong (IT Convergence Research Center, Division of Computer Science & Engineering, Chonbuk National University) ;
  • Shin, Seongsik (KyoungWon Tech Co.)
  • 정승한 (전북대학교 컴퓨터공학부) ;
  • 권오봉 (전북대학교 컴퓨터공학부, IT융합연구센터) ;
  • 신성식 (경원테크)
  • Received : 2014.12.10
  • Accepted : 2015.03.04
  • Published : 2015.03.25
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Abstract

In semiconductor etching simulation, The source modeling for generating plasma species is required. In this paper, we modeled the source of plasma etching process with probability distribution and the feature profile with simple geometry objects, then got the flux on the feature profile. The distance between the source and the cell on the modeling parameters of the source, there are a number of particles to be emitted from a source, there is a number (area of the cell) of the cell on the profile with additional parameters to give the calculation of flux. The flux error ratio on both gaussian(Incident Flux) and cosine probability distribution(Incident Neutral Flux) is much decreased as the number of ray is increased but the processing time is more increased than that. The increase of the number of cell and distance makes increase the flux error ratio and the processing time moderately. In view of the processing time through the experimental results in this paper, it is possible to analogize the calculation of appropriate fluxes.

반도체 식각 전산모사에서는 플라즈마 입자를 생성하는 소스의 모델링이 필요하다. 본 논문에서는 플라즈마 식각 공정에서 사용하는 소스를 확률분포함수로 모델링하고, 몬테칼를로 방법을 이용하여 특정 프로프일의 플럭스를 계산하는 실험을 하였다. 소스의 모델링 파라미터로 소스와 셀 사이의 거리, 소스에서 방사하는 입자수가 있고, 플럭스 계산에 미치는 추가적인 파라미터로 프로파일 상의 셀의 수(셀의 면적)이 있다. 방사하는 입자 분포는 사용하는 소스의 물성에 따라 가우시안 분포와 코사인 분포로 모델링 할 수 있는데, 본 논문은 이들 각각에 대하여 파라미터를 바꿔가며 전산모사를 한 결과를 보인다. 오차율은 가우지안(Incident Flux)과 코사인분포(Incident Neutral Flux)에서 모두 입자 수의 증가에 따라 상당부분 감소하였으나 처리시간은 이보다 더 증가하였다. 셀수와 거리의 증가는 오차율을 약간 증가시켰고 처리시간도 증가시켰다. 본 논문의 실험 결과를 통해 처리 시간을 고려하여 적합한 플럭스의 계산을 유추할 수 있다.

Keywords

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