Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지
DOI QR코드

DOI QR Code

Design and Fabrication of 2mm×2mm sized Piezoresistive Accelerometers

2mm×2mm 압저항형 가속도센서 설계 및 제작

  • 전연화 (울산대학교 전기공학부) ;
  • 김현철 (울산대학교 전기공학부)
  • Received : 2014.09.16
  • Accepted : 2015.01.26
  • Published : 2015.02.25
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, $2mm{\times}2mm$ sized piezoresistive accelerometers were designed and fabricated. Two kinds of accelerometers with different spring structure are designed. One is an accelerometer with 4 beam spring located in the center of the mass, the other is an accelerometer with 8 beam spring located in the vertices of the mass. The modal analysis of the accelerometers and the structural analysis were performed using ANSYS program. The former has the superior sensitivity characteristics of $21.38{\mu}V/V/g$ and the lower offset drift of $154.45ppm/^{\circ}C$ than the latter.

본 논문에서는 $2mm{\times}2mm$ 크기를 가지며 빔의 위치가 다른 2가지 종류의 압저항형 가속도 센서를 설계하고 제작하여 감도 특성과 온도에 따른 옵셋 특성을 측정하고 비교하였다. 4빔 스프링 구조와 8빔 스프링 구조를 가지는 압저항형 가속도센서를 제작 하였으며, ANSYS 프로그램을 이용하여 공진주파수 특성과 스트레스 분포도를 분석하고 제작하였다. 제작된 가속도센서의 감도와 온도에 따른 옵셋 특성을 측정하고 서로 비교하였다. 감도는 4빔 스프링 구조가 $21.38{\mu}V/V/g$으로 더 우수한 특성을 보였으며 온도에 따른 옵셋 출력 전압은 4빔 스프링 구조가 $154.45ppm/^{\circ}C$으로 더 작게 변화하였다.

Keywords

References

  1. S. Kal, S. Das, D. K. Maurya, K. Biswas, A Ravi Sankar, S. K. Lahiri, "CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off axis sensitivity", Microelectronics Journal, 37, 200, pp. 22-30. https://doi.org/10.1016/j.mejo.2005.06.020
  2. Petersen, K.E. Silicon Sensor Technologies. In Proceedings of the International Electron Devices Meeting, Washington, DC, USA, 1-4 December 1985; pp. 2-7.
  3. Barlian, A.A.; Park, W.T.; Mallon, J.R.; Rastegar, A.J.; Pruitt, B.L. Review: Semiconductor piezoresistance for microsystems. Proc. IEEE 2009, pp.513-552.
  4. French, P.J. Polysilicon: A versatile material for microsystems. Sens. Actuat. A 2002, pp,3-12. https://doi.org/10.1016/S0924-4247(01)00876-7
  5. SangHo Lee, JunHwan Sim, JongHyun Lee, "Fabrication of 4-Beam Piezoresistive Silicon Acceleration Sensor and Its Bump Bonding Technique", IEEK Summer Conference Vol. 18 No. 1, 1995. 7, pp.798-801
  6. JunHwan Sim, SangHo Lee, JongHyun Lee, "Fabrication of Bump Bonded Piezoresistive Silicon Accelerometer", Journal of the IEEK-D Vol.34 No.7, 1997.7, 536-542
  7. Ki Woong Park and Hyeon Cheol Kim, "Design and Fabrication of 4-beam Silicon-Micro Piezoresistive Accelerometer for TPMS Application", Journal of the IEEK-SD Vol.49 No. 2, 2012.2, pp.1-8
  8. JunHwan Sim, DongKwon Kim, JongHyun Lee, "Fabrication of Six-Beam Accelerometer with Self-Eliminated Off-Axis Sensitivity by Summing Circuit ", IEEK, 1998, pp. 127-133
  9. JunHwan Sim, WooJeong Kim, InSik Yu, JungHee Lee, "Fabrication of Piezoresistive Silicon Acceleration Sensor with Eight Beams", IEEK Summer Conference Vol.18 No.1, 1995.6, pp. 794-797
  10. By A. Alvin Barlian, Woo-Tae Park, Joseph R.Mallon, Jr., Ali J. Rastegar, and Beth L. Pruitt, "Review: Semiconductor Piezoresistance forMicrosystems," proceedings of the IEEE., vol.97, 2009, pp. 530-533.
  11. G. Ionascu, Technologies of Microtechnics forMEMS (in Romanian), Ed. Cartea Universitara, Bucharest, 2004, pp. 61-97.

Cited by

  1. 나노갭 트렌치 공정을 이용한 가속도센서 제작 vol.9, pp.2, 2015, https://doi.org/10.17661/jkiiect.2016.9.2.155