Applied Science and Convergence Technology

한국진공학회 (The Korean Vacuum Society)
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Effect of Growth Temperature on the Luminescence Properties of InP/GaP Short-Period Superlattice Structures

  • Byun, Hye Ryoung (Department of Physics, Kangwon National University) ;
  • Ryu, Mee-Yi (Department of Physics, Kangwon National University) ;
  • Song, Jin Dong (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology) ;
  • Lee, Chang Lyul (Advanced Photonics Research Institute, Gwangju Institute of Science and Technology)
  • 투고 : 2015.01.23
  • 심사 : 2015.01.30
  • 발행 : 2015.01.30
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초록

The optical properties of InP/GaP short-period superlattice (SPS) structures grown at various temperatures from $400^{\circ}C$ to $490^{\circ}C$ have been investigated by using temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL measurements. The PL peak energy for SPS samples decreases as the growth temperature increases. The decreased PL energy of ~10 meV for the sample grown at $425^{\circ}C$ compared to that for $400^{\circ}C$-grown sample is due to the CuPt-B type ordering, while the SPS samples grown at $460^{\circ}C$ and $490^{\circ}C$ exhibit the significant reduction of the PL peak energies due to the combined effects of the formation of lateral composition modulation (LCM) and CuPt-B type ordering. The SPS samples with LCM structure show the enhanced carrier lifetime due to the spatial separation of carriers. This study represents that the bandgap energy of InP/GaP SPS structures can be controlled by varying growth temperature, leading to LCM formation and CuPt-B type ordering.

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