반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

GZO 박막에 대한 비정질 구조에 따른 산소공공과 전하농도의 연관성에 대한 연구

A Study on the Relationship between Oxygen and Carrier Concentration in a GZO Film on an Amorphous Structure

  • 김도형 (청주대학교 전자공학과) ;
  • 김홍배 (청주대학교 반도체공학과)
  • Kim, Do Hyoung (Electronic Engineering, Choenju University) ;
  • Kim, Hong Bae (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2015.11.06
  • 심사 : 2015.11.30
  • 발행 : 2015.12.31
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초록

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

키워드

참고문헌

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