Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Electrical Characteristics of the SiC SBD Prepared by using the Facing Targets Sputtering Method

대향 타겟 스퍼터링법으로 제작한 SiC SBD의 전기적 특성

  • Received : 2015.02.26
  • Accepted : 2015.03.23
  • Published : 2015.03.31
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Abstract

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

Keywords

References

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